Microstructural study of reaction-bonded silicon carbide

K. Das Chowdhury, Ray Carpenter, W. Braue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Interfaces in Reaction Bonded Silicon Carbide (RBSC) have been characterized by Analytical and High Resolution Electron Microscopy. Both Si/SiC and SiC/SiC interfaces were free of any oxygen impurity segregation, but contained metallic impurity precipitates. Oxygen was detected in the second phase particles in the SiC grains. A model is presented to explain the evolution of these second phase particles in the SiC grains.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages183-188
Number of pages6
Volume295
ISBN (Print)1558991905
StatePublished - 1993
EventSymposium on Atomic-scale Imaging of Surfaces and Interfaces -
Duration: Nov 30 1992Dec 2 1992

Other

OtherSymposium on Atomic-scale Imaging of Surfaces and Interfaces
Period11/30/9212/2/92

Fingerprint

Silicon carbide
Impurities
Oxygen
High resolution electron microscopy
Precipitates
silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chowdhury, K. D., Carpenter, R., & Braue, W. (1993). Microstructural study of reaction-bonded silicon carbide. In Materials Research Society Symposium Proceedings (Vol. 295, pp. 183-188). Pittsburgh, PA, United States: Publ by Materials Research Society.

Microstructural study of reaction-bonded silicon carbide. / Chowdhury, K. Das; Carpenter, Ray; Braue, W.

Materials Research Society Symposium Proceedings. Vol. 295 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 183-188.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chowdhury, KD, Carpenter, R & Braue, W 1993, Microstructural study of reaction-bonded silicon carbide. in Materials Research Society Symposium Proceedings. vol. 295, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 183-188, Symposium on Atomic-scale Imaging of Surfaces and Interfaces, 11/30/92.
Chowdhury KD, Carpenter R, Braue W. Microstructural study of reaction-bonded silicon carbide. In Materials Research Society Symposium Proceedings. Vol. 295. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 183-188
Chowdhury, K. Das ; Carpenter, Ray ; Braue, W. / Microstructural study of reaction-bonded silicon carbide. Materials Research Society Symposium Proceedings. Vol. 295 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 183-188
@inproceedings{9b7aeadaa33941f4b5faa61a1aa9732d,
title = "Microstructural study of reaction-bonded silicon carbide",
abstract = "Interfaces in Reaction Bonded Silicon Carbide (RBSC) have been characterized by Analytical and High Resolution Electron Microscopy. Both Si/SiC and SiC/SiC interfaces were free of any oxygen impurity segregation, but contained metallic impurity precipitates. Oxygen was detected in the second phase particles in the SiC grains. A model is presented to explain the evolution of these second phase particles in the SiC grains.",
author = "Chowdhury, {K. Das} and Ray Carpenter and W. Braue",
year = "1993",
language = "English (US)",
isbn = "1558991905",
volume = "295",
pages = "183--188",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

TY - GEN

T1 - Microstructural study of reaction-bonded silicon carbide

AU - Chowdhury, K. Das

AU - Carpenter, Ray

AU - Braue, W.

PY - 1993

Y1 - 1993

N2 - Interfaces in Reaction Bonded Silicon Carbide (RBSC) have been characterized by Analytical and High Resolution Electron Microscopy. Both Si/SiC and SiC/SiC interfaces were free of any oxygen impurity segregation, but contained metallic impurity precipitates. Oxygen was detected in the second phase particles in the SiC grains. A model is presented to explain the evolution of these second phase particles in the SiC grains.

AB - Interfaces in Reaction Bonded Silicon Carbide (RBSC) have been characterized by Analytical and High Resolution Electron Microscopy. Both Si/SiC and SiC/SiC interfaces were free of any oxygen impurity segregation, but contained metallic impurity precipitates. Oxygen was detected in the second phase particles in the SiC grains. A model is presented to explain the evolution of these second phase particles in the SiC grains.

UR - http://www.scopus.com/inward/record.url?scp=0027154509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027154509&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027154509

SN - 1558991905

VL - 295

SP - 183

EP - 188

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

CY - Pittsburgh, PA, United States

ER -