@inproceedings{9b7aeadaa33941f4b5faa61a1aa9732d,
title = "Microstructural study of reaction-bonded silicon carbide",
abstract = "Interfaces in Reaction Bonded Silicon Carbide (RBSC) have been characterized by Analytical and High Resolution Electron Microscopy. Both Si/SiC and SiC/SiC interfaces were free of any oxygen impurity segregation, but contained metallic impurity precipitates. Oxygen was detected in the second phase particles in the SiC grains. A model is presented to explain the evolution of these second phase particles in the SiC grains.",
author = "Chowdhury, {K. Das} and Ray Carpenter and W. Braue",
year = "1993",
language = "English (US)",
isbn = "1558991905",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "183--188",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Symposium on Atomic-scale Imaging of Surfaces and Interfaces ; Conference date: 30-11-1992 Through 02-12-1992",
}