Microstructural study of reaction-bonded silicon carbide

K. Das Chowdhury, Ray Carpenter, W. Braue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Interfaces in Reaction Bonded Silicon Carbide (RBSC) have been characterized by Analytical and High Resolution Electron Microscopy. Both Si/SiC and SiC/SiC interfaces were free of any oxygen impurity segregation, but contained metallic impurity precipitates. Oxygen was detected in the second phase particles in the SiC grains. A model is presented to explain the evolution of these second phase particles in the SiC grains.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages183-188
Number of pages6
ISBN (Print)1558991905
StatePublished - Jan 1 1993
EventSymposium on Atomic-scale Imaging of Surfaces and Interfaces -
Duration: Nov 30 1992Dec 2 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume295
ISSN (Print)0272-9172

Other

OtherSymposium on Atomic-scale Imaging of Surfaces and Interfaces
Period11/30/9212/2/92

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Chowdhury, K. D., Carpenter, R., & Braue, W. (1993). Microstructural study of reaction-bonded silicon carbide. In Materials Research Society Symposium Proceedings (pp. 183-188). (Materials Research Society Symposium Proceedings; Vol. 295). Publ by Materials Research Society.