Microstructural properties of Eu-doped GaN luminescent powders

O. Contreras, S. Srinivasan, Fernando Ponce, G. A. Hirata, F. Ramos, J. McKittrick

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

GaN powders doped with europium have been prepared using Eu and Ga nitrates and N2H4 as reactants. The resulting particles have dimensions ranging from 0.5 to 1.0 μm. The crystalline structure was studied by transmission electron microscopy, and it consisted of single crystals with a hexagonal (wurtzite) structure containing small cubic domains (zinc blende) and a high density of stacking faults, all aligned along the [0001] and 〈111〉 directions, respectively. Cathodoluminescence measurements show strong light emission in the red region. This luminescence corresponds to transitions of Eu with the strongest emission in the 611 nm line, which is associated to the Eu3+ 4f transition from 5D0 to 7F2. These results demonstrate the feasibility of GaN:RE powders for luminescent applications.

Original languageEnglish (US)
Pages (from-to)1993-1995
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number11
DOIs
StatePublished - Sep 9 2002

Fingerprint

europium
cathodoluminescence
crystal defects
wurtzite
light emission
nitrates
zinc
luminescence
transmission electron microscopy
single crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Contreras, O., Srinivasan, S., Ponce, F., Hirata, G. A., Ramos, F., & McKittrick, J. (2002). Microstructural properties of Eu-doped GaN luminescent powders. Applied Physics Letters, 81(11), 1993-1995. https://doi.org/10.1063/1.1507355

Microstructural properties of Eu-doped GaN luminescent powders. / Contreras, O.; Srinivasan, S.; Ponce, Fernando; Hirata, G. A.; Ramos, F.; McKittrick, J.

In: Applied Physics Letters, Vol. 81, No. 11, 09.09.2002, p. 1993-1995.

Research output: Contribution to journalArticle

Contreras, O, Srinivasan, S, Ponce, F, Hirata, GA, Ramos, F & McKittrick, J 2002, 'Microstructural properties of Eu-doped GaN luminescent powders', Applied Physics Letters, vol. 81, no. 11, pp. 1993-1995. https://doi.org/10.1063/1.1507355
Contreras O, Srinivasan S, Ponce F, Hirata GA, Ramos F, McKittrick J. Microstructural properties of Eu-doped GaN luminescent powders. Applied Physics Letters. 2002 Sep 9;81(11):1993-1995. https://doi.org/10.1063/1.1507355
Contreras, O. ; Srinivasan, S. ; Ponce, Fernando ; Hirata, G. A. ; Ramos, F. ; McKittrick, J. / Microstructural properties of Eu-doped GaN luminescent powders. In: Applied Physics Letters. 2002 ; Vol. 81, No. 11. pp. 1993-1995.
@article{a63f45ddb0304d64b2be4d17a72c3160,
title = "Microstructural properties of Eu-doped GaN luminescent powders",
abstract = "GaN powders doped with europium have been prepared using Eu and Ga nitrates and N2H4 as reactants. The resulting particles have dimensions ranging from 0.5 to 1.0 μm. The crystalline structure was studied by transmission electron microscopy, and it consisted of single crystals with a hexagonal (wurtzite) structure containing small cubic domains (zinc blende) and a high density of stacking faults, all aligned along the [0001] and 〈111〉 directions, respectively. Cathodoluminescence measurements show strong light emission in the red region. This luminescence corresponds to transitions of Eu with the strongest emission in the 611 nm line, which is associated to the Eu3+ 4f transition from 5D0 to 7F2. These results demonstrate the feasibility of GaN:RE powders for luminescent applications.",
author = "O. Contreras and S. Srinivasan and Fernando Ponce and Hirata, {G. A.} and F. Ramos and J. McKittrick",
year = "2002",
month = "9",
day = "9",
doi = "10.1063/1.1507355",
language = "English (US)",
volume = "81",
pages = "1993--1995",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Microstructural properties of Eu-doped GaN luminescent powders

AU - Contreras, O.

AU - Srinivasan, S.

AU - Ponce, Fernando

AU - Hirata, G. A.

AU - Ramos, F.

AU - McKittrick, J.

PY - 2002/9/9

Y1 - 2002/9/9

N2 - GaN powders doped with europium have been prepared using Eu and Ga nitrates and N2H4 as reactants. The resulting particles have dimensions ranging from 0.5 to 1.0 μm. The crystalline structure was studied by transmission electron microscopy, and it consisted of single crystals with a hexagonal (wurtzite) structure containing small cubic domains (zinc blende) and a high density of stacking faults, all aligned along the [0001] and 〈111〉 directions, respectively. Cathodoluminescence measurements show strong light emission in the red region. This luminescence corresponds to transitions of Eu with the strongest emission in the 611 nm line, which is associated to the Eu3+ 4f transition from 5D0 to 7F2. These results demonstrate the feasibility of GaN:RE powders for luminescent applications.

AB - GaN powders doped with europium have been prepared using Eu and Ga nitrates and N2H4 as reactants. The resulting particles have dimensions ranging from 0.5 to 1.0 μm. The crystalline structure was studied by transmission electron microscopy, and it consisted of single crystals with a hexagonal (wurtzite) structure containing small cubic domains (zinc blende) and a high density of stacking faults, all aligned along the [0001] and 〈111〉 directions, respectively. Cathodoluminescence measurements show strong light emission in the red region. This luminescence corresponds to transitions of Eu with the strongest emission in the 611 nm line, which is associated to the Eu3+ 4f transition from 5D0 to 7F2. These results demonstrate the feasibility of GaN:RE powders for luminescent applications.

UR - http://www.scopus.com/inward/record.url?scp=79956032880&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956032880&partnerID=8YFLogxK

U2 - 10.1063/1.1507355

DO - 10.1063/1.1507355

M3 - Article

AN - SCOPUS:79956032880

VL - 81

SP - 1993

EP - 1995

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -