Microstructural evolution of oxides during processing of oxygen implanted SOI material

S. J. Krause, S. Visitserngtrakul, B. F. Cordts, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon-on-insulator (SOI) material fabricated by oxygen implantation (SIMOX) is being used for radiation hard, higher speed, and higher temperature integrated circuits. The microstructural evolution of oxides during implantation, thermal ramping, and annealing plays a crucial role in development of the structure of the top Si layer and of the buried oxide layer. To control the micro-structure of the oxides and silicon it is necessary to understand the effect of processing conditions on the mechanisms of oxide formation and evolution. These processing conditions include: implantation temperature, energy, and dose; thermal ramping rate; and annealing time, temperature, and atmosphere. Numerous questions still remain on the effects of processing conditions and include: formation and growth of the buried oxide; formation and evolution of oxygen bubbles in the top silicon layer; and precipitate evolution and elimination during ramping and annealing. The goal of this paper is to summarize recent work on the effects of processing conditions on oxide evolution and to present new results on; effects of implantation conditions on buried oxide formation, effects of ramping conditions on oxygen bubble evolution and defect formation, and effects of annealing conditions on structure of the buried oxide and its interfaces.

Original languageEnglish (US)
Title of host publication1990 IEEE SOS/SOI Technology Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages47-48
Number of pages2
ISBN (Electronic)0879425733, 9780879425739
DOIs
StatePublished - Jan 1 1990
Event1990 IEEE SOS/SOI Technology Conference - Key West, United States
Duration: Oct 2 1990Oct 4 1990

Publication series

Name1990 IEEE SOS/SOI Technology Conference, Proceedings

Conference

Conference1990 IEEE SOS/SOI Technology Conference
CountryUnited States
CityKey West
Period10/2/9010/4/90

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Krause, S. J., Visitserngtrakul, S., Cordts, B. F., & Roitman, P. (1990). Microstructural evolution of oxides during processing of oxygen implanted SOI material. In 1990 IEEE SOS/SOI Technology Conference, Proceedings (pp. 47-48). [145703] (1990 IEEE SOS/SOI Technology Conference, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOSSOI.1990.145703