TY - GEN
T1 - Microstructural evolution of oxides during processing of oxygen implanted SOI material
AU - Krause, S. J.
AU - Visitserngtrakul, S.
AU - Cordts, B. F.
AU - Roitman, P.
N1 - Funding Information:
The staff support and use of the National Center for High Resolution Electron Microscopy supported by Arizona State University and the National Science Foundation is appreciated. Support of this research by National Science Foundation grant #DMR 89-01370 and Defense Nuclear Agency contract #DNA-IACRO-88-800 is also acknowledged.
Funding Information:
Acknowled- The staff support and use of the National Center for High Resolution Electron Microscopy supported by Arizona State University and the National Science Foundation is appreciated. Support of this research by National Science Foundation grant #DMR 89-01370 and Defense Nuclear Agency "act #DNA-LACRO-88-800 is also acknowledged.
Publisher Copyright:
© 1990 IEEE.
PY - 1990
Y1 - 1990
N2 - Silicon-on-insulator (SOI) material fabricated by oxygen implantation (SIMOX) is being used for radiation hard, higher speed, and higher temperature integrated circuits. The microstructural evolution of oxides during implantation, thermal ramping, and annealing plays a crucial role in development of the structure of the top Si layer and of the buried oxide layer. To control the micro-structure of the oxides and silicon it is necessary to understand the effect of processing conditions on the mechanisms of oxide formation and evolution. These processing conditions include: implantation temperature, energy, and dose; thermal ramping rate; and annealing time, temperature, and atmosphere. Numerous questions still remain on the effects of processing conditions and include: formation and growth of the buried oxide; formation and evolution of oxygen bubbles in the top silicon layer; and precipitate evolution and elimination during ramping and annealing. The goal of this paper is to summarize recent work on the effects of processing conditions on oxide evolution and to present new results on; effects of implantation conditions on buried oxide formation, effects of ramping conditions on oxygen bubble evolution and defect formation, and effects of annealing conditions on structure of the buried oxide and its interfaces.
AB - Silicon-on-insulator (SOI) material fabricated by oxygen implantation (SIMOX) is being used for radiation hard, higher speed, and higher temperature integrated circuits. The microstructural evolution of oxides during implantation, thermal ramping, and annealing plays a crucial role in development of the structure of the top Si layer and of the buried oxide layer. To control the micro-structure of the oxides and silicon it is necessary to understand the effect of processing conditions on the mechanisms of oxide formation and evolution. These processing conditions include: implantation temperature, energy, and dose; thermal ramping rate; and annealing time, temperature, and atmosphere. Numerous questions still remain on the effects of processing conditions and include: formation and growth of the buried oxide; formation and evolution of oxygen bubbles in the top silicon layer; and precipitate evolution and elimination during ramping and annealing. The goal of this paper is to summarize recent work on the effects of processing conditions on oxide evolution and to present new results on; effects of implantation conditions on buried oxide formation, effects of ramping conditions on oxygen bubble evolution and defect formation, and effects of annealing conditions on structure of the buried oxide and its interfaces.
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U2 - 10.1109/SOSSOI.1990.145703
DO - 10.1109/SOSSOI.1990.145703
M3 - Conference contribution
AN - SCOPUS:85068333938
T3 - 1990 IEEE SOS/SOI Technology Conference, Proceedings
SP - 47
EP - 48
BT - 1990 IEEE SOS/SOI Technology Conference, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1990 IEEE SOS/SOI Technology Conference
Y2 - 2 October 1990 through 4 October 1990
ER -