TY - JOUR
T1 - Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (1 0 0) substrates
AU - Ouyang, Lu
AU - Fan, J.
AU - Wang, S.
AU - Lu, X.
AU - Zhang, Y. H.
AU - Liu, X.
AU - Furdyna, J. K.
AU - Smith, David
N1 - Funding Information:
This work at ASU was partially supported by the Science Foundation Arizona , with Contract numbers SRG 0190–07 and SRG 0339–08 , the Air Force Research Laboratory/Space Vehicles Directorate , with Contract number FA9453-08-2-0228 , and an NSF Grant, with Contract number 1002114 . The work at Notre Dame is partially supported by NSF Grant DMR1002072 , and the same Air Force Research Laboratory/Space Vehicles Directorate program. The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
PY - 2011/9/1
Y1 - 2011/9/1
N2 - This paper describes a comprehensive investigation of thick ZnTe epilayers (∼2.4 μm) grown under virtually identical conditions on GaSb, InAs, InP and GaAs (1 0 0) substrates using molecular beam epitaxy. Cross-section transmission electron micrographs of the different heterostructures showed greatly reduced defect densities away from the interface region. High-resolution electron micrographs revealed a highly coherent interface with isolated dislocations for the ZnTe/GaSb sample, and showed extensive areas with well-separated interfacial misfit dislocations for the ZnTe/InAs sample. Lomer edge dislocations with Burgers' vector of (1/2)a 〈1 1 0〉, as well as perfect 60° dislocations, were identified at the interfaces of the ZnTe/InP and ZnTe/GaAs samples. Digital image processing based on latticefringe images was also used to analyze the spatial distribution of misfit dislocations at the hetero-interfaces, in particular to estimate the amount of residual strain.
AB - This paper describes a comprehensive investigation of thick ZnTe epilayers (∼2.4 μm) grown under virtually identical conditions on GaSb, InAs, InP and GaAs (1 0 0) substrates using molecular beam epitaxy. Cross-section transmission electron micrographs of the different heterostructures showed greatly reduced defect densities away from the interface region. High-resolution electron micrographs revealed a highly coherent interface with isolated dislocations for the ZnTe/GaSb sample, and showed extensive areas with well-separated interfacial misfit dislocations for the ZnTe/InAs sample. Lomer edge dislocations with Burgers' vector of (1/2)a 〈1 1 0〉, as well as perfect 60° dislocations, were identified at the interfaces of the ZnTe/InP and ZnTe/GaAs samples. Digital image processing based on latticefringe images was also used to analyze the spatial distribution of misfit dislocations at the hetero-interfaces, in particular to estimate the amount of residual strain.
KW - A1. Characterization
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting IIVI materials
KW - B3. Solar cells
UR - http://www.scopus.com/inward/record.url?scp=80051548940&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80051548940&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2011.06.054
DO - 10.1016/j.jcrysgro.2011.06.054
M3 - Article
AN - SCOPUS:80051548940
SN - 0022-0248
VL - 330
SP - 30
EP - 34
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -