Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (1 0 0) substrates

Lu Ouyang, J. Fan, S. Wang, X. Lu, Y. H. Zhang, X. Liu, J. K. Furdyna, David Smith

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Abstract

This paper describes a comprehensive investigation of thick ZnTe epilayers (∼2.4 μm) grown under virtually identical conditions on GaSb, InAs, InP and GaAs (1 0 0) substrates using molecular beam epitaxy. Cross-section transmission electron micrographs of the different heterostructures showed greatly reduced defect densities away from the interface region. High-resolution electron micrographs revealed a highly coherent interface with isolated dislocations for the ZnTe/GaSb sample, and showed extensive areas with well-separated interfacial misfit dislocations for the ZnTe/InAs sample. Lomer edge dislocations with Burgers' vector of (1/2)a 〈1 1 0〉, as well as perfect 60° dislocations, were identified at the interfaces of the ZnTe/InP and ZnTe/GaAs samples. Digital image processing based on latticefringe images was also used to analyze the spatial distribution of misfit dislocations at the hetero-interfaces, in particular to estimate the amount of residual strain.

Original languageEnglish (US)
Pages (from-to)30-34
Number of pages5
JournalJournal of Crystal Growth
Volume330
Issue number1
DOIs
StatePublished - Sep 1 2011

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Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • B2. Semiconducting IIVI materials
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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