Microstructural characterization of InN/GaN multiple quantum wells

Lin Zhou; E. Dimakis; T. D. Moustakas; David Smith

doi:10.1017/S143192760808481X

Microstructural characterization of InN/GaN multiple quantum wells

Lin Zhou, E. Dimakis, T. D. Moustakas, David Smith

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	256-257
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	14
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S143192760808481X
State	Published - Aug 2008

ASJC Scopus subject areas

Instrumentation

Access to Document

10.1017/S143192760808481X

Cite this

@article{74d7657accfa412f8ccc0dba0d022b86,

title = "Microstructural characterization of InN/GaN multiple quantum wells",

author = "Lin Zhou and E. Dimakis and Moustakas, {T. D.} and David Smith",

year = "2008",

month = aug,

doi = "10.1017/S143192760808481X",

language = "English (US)",

volume = "14",

pages = "256--257",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

number = "SUPPL. 2",

}

TY - JOUR

T1 - Microstructural characterization of InN/GaN multiple quantum wells

AU - Zhou, Lin

AU - Dimakis, E.

AU - Moustakas, T. D.

AU - Smith, David

PY - 2008/8

Y1 - 2008/8

UR - http://www.scopus.com/inward/record.url?scp=49549125880&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49549125880&partnerID=8YFLogxK

U2 - 10.1017/S143192760808481X

DO - 10.1017/S143192760808481X

M3 - Article

AN - SCOPUS:49549125880

SN - 1431-9276

VL - 14

SP - 256

EP - 257

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -

Microstructural characterization of InN/GaN multiple quantum wells

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this