Microstructural characterization of HgTe/HgCdTe superlattices

T. Aoki, M. Takeguchi, P. Boieriu, R. Singh, C. Grein, Y. Chang, S. Sivananthan, David Smith

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effects of annealing on the microstructure of HgTe/Hg 0.05Cd0.95Te/CdZnTe(211) superlattices (SLs) grown by molecular beam epitaxy have been investigated by high-resolution electron microscopy, and Z-contrast imaging was utilized to study the chemical abruptness of the HgTe/HgCdTe interfaces. Low-temperature annealing at 225 or 250°C induced interdiffusion, leading to changes in the well/barrier widths. The SLs became more defective even after 30 min of annealing. The widths of the HgTe well layers increased and the widths of the HgCdTe barrier layers decreased dramatically. Thus, activation of p-type dopants such as arsenic through annealing will be difficult to achieve without degradation of electrical and optical properties.

Original languageEnglish (US)
Pages (from-to)29-36
Number of pages8
JournalJournal of Crystal Growth
Volume271
Issue number1-2
DOIs
StatePublished - Oct 15 2004

Fingerprint

Superlattices
superlattices
Annealing
annealing
High resolution electron microscopy
Arsenic
barrier layers
Molecular beam epitaxy
arsenic
electron microscopy
Electric properties
molecular beam epitaxy
Optical properties
Chemical activation
electrical properties
Doping (additives)
activation
degradation
Imaging techniques
optical properties

Keywords

  • A1. Characterization
  • A1. Diffusion
  • A1. Interface
  • A3. Molecular beam epitaxy
  • B2. Semiconducting mercury compounds
  • B3. Infrared device

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Aoki, T., Takeguchi, M., Boieriu, P., Singh, R., Grein, C., Chang, Y., ... Smith, D. (2004). Microstructural characterization of HgTe/HgCdTe superlattices. Journal of Crystal Growth, 271(1-2), 29-36. https://doi.org/10.1016/j.jcrysgro.2004.07.055

Microstructural characterization of HgTe/HgCdTe superlattices. / Aoki, T.; Takeguchi, M.; Boieriu, P.; Singh, R.; Grein, C.; Chang, Y.; Sivananthan, S.; Smith, David.

In: Journal of Crystal Growth, Vol. 271, No. 1-2, 15.10.2004, p. 29-36.

Research output: Contribution to journalArticle

Aoki, T, Takeguchi, M, Boieriu, P, Singh, R, Grein, C, Chang, Y, Sivananthan, S & Smith, D 2004, 'Microstructural characterization of HgTe/HgCdTe superlattices', Journal of Crystal Growth, vol. 271, no. 1-2, pp. 29-36. https://doi.org/10.1016/j.jcrysgro.2004.07.055
Aoki T, Takeguchi M, Boieriu P, Singh R, Grein C, Chang Y et al. Microstructural characterization of HgTe/HgCdTe superlattices. Journal of Crystal Growth. 2004 Oct 15;271(1-2):29-36. https://doi.org/10.1016/j.jcrysgro.2004.07.055
Aoki, T. ; Takeguchi, M. ; Boieriu, P. ; Singh, R. ; Grein, C. ; Chang, Y. ; Sivananthan, S. ; Smith, David. / Microstructural characterization of HgTe/HgCdTe superlattices. In: Journal of Crystal Growth. 2004 ; Vol. 271, No. 1-2. pp. 29-36.
@article{62b76c3d9f1b474eadf86c9f3e03ca7f,
title = "Microstructural characterization of HgTe/HgCdTe superlattices",
abstract = "The effects of annealing on the microstructure of HgTe/Hg 0.05Cd0.95Te/CdZnTe(211) superlattices (SLs) grown by molecular beam epitaxy have been investigated by high-resolution electron microscopy, and Z-contrast imaging was utilized to study the chemical abruptness of the HgTe/HgCdTe interfaces. Low-temperature annealing at 225 or 250°C induced interdiffusion, leading to changes in the well/barrier widths. The SLs became more defective even after 30 min of annealing. The widths of the HgTe well layers increased and the widths of the HgCdTe barrier layers decreased dramatically. Thus, activation of p-type dopants such as arsenic through annealing will be difficult to achieve without degradation of electrical and optical properties.",
keywords = "A1. Characterization, A1. Diffusion, A1. Interface, A3. Molecular beam epitaxy, B2. Semiconducting mercury compounds, B3. Infrared device",
author = "T. Aoki and M. Takeguchi and P. Boieriu and R. Singh and C. Grein and Y. Chang and S. Sivananthan and David Smith",
year = "2004",
month = "10",
day = "15",
doi = "10.1016/j.jcrysgro.2004.07.055",
language = "English (US)",
volume = "271",
pages = "29--36",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Microstructural characterization of HgTe/HgCdTe superlattices

AU - Aoki, T.

AU - Takeguchi, M.

AU - Boieriu, P.

AU - Singh, R.

AU - Grein, C.

AU - Chang, Y.

AU - Sivananthan, S.

AU - Smith, David

PY - 2004/10/15

Y1 - 2004/10/15

N2 - The effects of annealing on the microstructure of HgTe/Hg 0.05Cd0.95Te/CdZnTe(211) superlattices (SLs) grown by molecular beam epitaxy have been investigated by high-resolution electron microscopy, and Z-contrast imaging was utilized to study the chemical abruptness of the HgTe/HgCdTe interfaces. Low-temperature annealing at 225 or 250°C induced interdiffusion, leading to changes in the well/barrier widths. The SLs became more defective even after 30 min of annealing. The widths of the HgTe well layers increased and the widths of the HgCdTe barrier layers decreased dramatically. Thus, activation of p-type dopants such as arsenic through annealing will be difficult to achieve without degradation of electrical and optical properties.

AB - The effects of annealing on the microstructure of HgTe/Hg 0.05Cd0.95Te/CdZnTe(211) superlattices (SLs) grown by molecular beam epitaxy have been investigated by high-resolution electron microscopy, and Z-contrast imaging was utilized to study the chemical abruptness of the HgTe/HgCdTe interfaces. Low-temperature annealing at 225 or 250°C induced interdiffusion, leading to changes in the well/barrier widths. The SLs became more defective even after 30 min of annealing. The widths of the HgTe well layers increased and the widths of the HgCdTe barrier layers decreased dramatically. Thus, activation of p-type dopants such as arsenic through annealing will be difficult to achieve without degradation of electrical and optical properties.

KW - A1. Characterization

KW - A1. Diffusion

KW - A1. Interface

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting mercury compounds

KW - B3. Infrared device

UR - http://www.scopus.com/inward/record.url?scp=4944250306&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944250306&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.07.055

DO - 10.1016/j.jcrysgro.2004.07.055

M3 - Article

AN - SCOPUS:4944250306

VL - 271

SP - 29

EP - 36

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -