Microstructural characterization of HgCdSe grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Substrates 45%
• Growth temperature 34%
• Buffer layers 30%
• Microanalysis 29%
• Transmission electron microscopy 22%
• Thin films 20%
• Fluxes 17%
• Defects 14%
• Microstructure 14%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Microstructure 43%
• Transmission Electron Microscopy 42%
• Buffer Solution 41%

Physics & Astronomy

• molecular beam epitaxy 54%
• characterization 35%
• microanalysis 23%
• buffers 18%
• preparation 15%
• transmission electron microscopy 14%
• probes 12%
• microstructure 12%
• defects 11%
• thin films 11%
• temperature 6%