Microstructural characterization of HgCdSe grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates

W. F. Zhao, G. Brill, Y. Chen, David Smith

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure of HgCdSe thin films grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates. The quality of the HgCdSe material was dependent on the growth temperature and materials flux, independent of the substrate. Samples grown at 100°C were generally of high quality, while those grown at 140°C had {111}-type stacking defects and increased dislocation densities. Improved preparation of the GaSb buffer layer should be developed for future HgCdSe growth on GaSb(112) substrates.

Original languageEnglish (US)
Pages (from-to)2852-2856
Number of pages5
JournalJournal of Electronic Materials
Volume41
Issue number10
DOIs
StatePublished - Oct 1 2012

Keywords

  • GaSb(112)
  • HgCdSe
  • MBE
  • TEM
  • ZnTe/Si(112)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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