Microstructural characterization of HgCdSe grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates

W. F. Zhao, G. Brill, Y. Chen, David Smith

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure of HgCdSe thin films grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates. The quality of the HgCdSe material was dependent on the growth temperature and materials flux, independent of the substrate. Samples grown at 100°C were generally of high quality, while those grown at 140°C had {111}-type stacking defects and increased dislocation densities. Improved preparation of the GaSb buffer layer should be developed for future HgCdSe growth on GaSb(112) substrates.

Original languageEnglish (US)
Pages (from-to)2852-2856
Number of pages5
JournalJournal of Electronic Materials
Volume41
Issue number10
DOIs
StatePublished - Oct 2012

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Substrates
Microanalysis
Growth temperature
Buffer layers
microanalysis
buffers
Fluxes
Transmission electron microscopy
Thin films
Defects
preparation
transmission electron microscopy
microstructure
Microstructure
probes
defects
thin films
temperature

Keywords

  • GaSb(112)
  • HgCdSe
  • MBE
  • TEM
  • ZnTe/Si(112)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Microstructural characterization of HgCdSe grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates. / Zhao, W. F.; Brill, G.; Chen, Y.; Smith, David.

In: Journal of Electronic Materials, Vol. 41, No. 10, 10.2012, p. 2852-2856.

Research output: Contribution to journalArticle

@article{ddb5e1044d204721b46a89411281b536,
title = "Microstructural characterization of HgCdSe grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates",
abstract = "Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure of HgCdSe thin films grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates. The quality of the HgCdSe material was dependent on the growth temperature and materials flux, independent of the substrate. Samples grown at 100°C were generally of high quality, while those grown at 140°C had {111}-type stacking defects and increased dislocation densities. Improved preparation of the GaSb buffer layer should be developed for future HgCdSe growth on GaSb(112) substrates.",
keywords = "GaSb(112), HgCdSe, MBE, TEM, ZnTe/Si(112)",
author = "Zhao, {W. F.} and G. Brill and Y. Chen and David Smith",
year = "2012",
month = "10",
doi = "10.1007/s11664-012-2069-7",
language = "English (US)",
volume = "41",
pages = "2852--2856",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "10",

}

TY - JOUR

T1 - Microstructural characterization of HgCdSe grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates

AU - Zhao, W. F.

AU - Brill, G.

AU - Chen, Y.

AU - Smith, David

PY - 2012/10

Y1 - 2012/10

N2 - Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure of HgCdSe thin films grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates. The quality of the HgCdSe material was dependent on the growth temperature and materials flux, independent of the substrate. Samples grown at 100°C were generally of high quality, while those grown at 140°C had {111}-type stacking defects and increased dislocation densities. Improved preparation of the GaSb buffer layer should be developed for future HgCdSe growth on GaSb(112) substrates.

AB - Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure of HgCdSe thin films grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates. The quality of the HgCdSe material was dependent on the growth temperature and materials flux, independent of the substrate. Samples grown at 100°C were generally of high quality, while those grown at 140°C had {111}-type stacking defects and increased dislocation densities. Improved preparation of the GaSb buffer layer should be developed for future HgCdSe growth on GaSb(112) substrates.

KW - GaSb(112)

KW - HgCdSe

KW - MBE

KW - TEM

KW - ZnTe/Si(112)

UR - http://www.scopus.com/inward/record.url?scp=84868516248&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84868516248&partnerID=8YFLogxK

U2 - 10.1007/s11664-012-2069-7

DO - 10.1007/s11664-012-2069-7

M3 - Article

AN - SCOPUS:84868516248

VL - 41

SP - 2852

EP - 2856

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 10

ER -