Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures

M. Vaghayenegar, K. J. Doyle, S. Trivedi, P. Wijewarnasuriya, David Smith

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were decorated with {111}-type stacking faults inclined at angles of ∼ 19° or ∼ 90° with respect to the interface plane. Similar stacking faults were also present in the upper regions of the HgCdSe films. High-resolution imaging and Fourier image analysis revealed dislocations, mostly with a3〈1¯11〉 Burgers vector, at both ZnTe/Si and HgCdSe/ZnTe interfaces. Etching solutions based on different combinations of nitric acid, hydrochloric acid and lactic acid were tried in attempts to identify an etchant that provided one-to-one correspondence between etch pits and defects in the HgCdSe layer. Focused-ion-beam milling and transmission electron microscopy were used to prepare site-specific cross-section samples from across the etch pits. However, many defects in regions surrounding the etch pits were unaffected by the various different etchants.

Original languageEnglish (US)
Pages (from-to)571-582
Number of pages12
JournalJournal of Electronic Materials
Volume48
Issue number1
DOIs
StatePublished - Jan 15 2019

Keywords

  • HgCdSe (211)
  • ZnTe
  • alternative substrates
  • dislocations
  • etch pits

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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