Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy

W. F. Zhao, R. N. Jacobs, M. Jaime-Vasquez, L. O. Bubulac, David Smith

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.

Original languageEnglish (US)
Pages (from-to)1733-1737
Number of pages5
JournalJournal of Electronic Materials
Volume40
Issue number8
DOIs
StatePublished - Aug 1 2011

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Keywords

  • CdTe
  • ZnTe
  • high-angle annular-dark-field (HAADF) imaging
  • transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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