Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy

W. F. Zhao; R. N. Jacobs; M. Jaime-Vasquez; L. O. Bubulac; David Smith

doi:10.1007/s11664-011-1673-2

Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy

W. F. Zhao, R. N. Jacobs, M. Jaime-Vasquez, L. O. Bubulac, David Smith

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.

Original language	English (US)
Pages (from-to)	1733-1737
Number of pages	5
Journal	Journal of Electronic Materials
Volume	40
Issue number	8
DOIs	https://doi.org/10.1007/s11664-011-1673-2
State	Published - Aug 2011

Keywords

CdTe
ZnTe
high-angle annular-dark-field (HAADF) imaging
transmission electron microscopy (TEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s11664-011-1673-2

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title = "Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy",

abstract = "Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.",

keywords = "CdTe, ZnTe, high-angle annular-dark-field (HAADF) imaging, transmission electron microscopy (TEM)",

author = "Zhao, {W. F.} and Jacobs, {R. N.} and M. Jaime-Vasquez and Bubulac, {L. O.} and David Smith",

note = "Funding Information: The work at Arizona State University has been supported by ARO Contract #54657EL (Monitor: Dr. W. Clark). We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy.",

year = "2011",

month = aug,

doi = "10.1007/s11664-011-1673-2",

language = "English (US)",

volume = "40",

pages = "1733--1737",

journal = "Journal of Electronic Materials",

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AU - Zhao, W. F.

AU - Jacobs, R. N.

AU - Jaime-Vasquez, M.

AU - Bubulac, L. O.

AU - Smith, David

N1 - Funding Information: The work at Arizona State University has been supported by ARO Contract #54657EL (Monitor: Dr. W. Clark). We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy.

PY - 2011/8

Y1 - 2011/8

N2 - Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.

AB - Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.

KW - CdTe

KW - ZnTe

KW - high-angle annular-dark-field (HAADF) imaging

KW - transmission electron microscopy (TEM)

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DO - 10.1007/s11664-011-1673-2

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SN - 0361-5235

VL - 40

SP - 1733

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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