Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy

W. F. Zhao, R. N. Jacobs, M. Jaime-Vasquez, L. O. Bubulac, David Smith

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.

Original languageEnglish (US)
Pages (from-to)1733-1737
Number of pages5
JournalJournal of Electronic Materials
Volume40
Issue number8
DOIs
StatePublished - Aug 2011

Fingerprint

Molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Epilayers
Stacking faults
Microanalysis
Substrates
Buffer layers
Lattice constants
Transmission electron microscopy
Microstructure
profiles
microanalysis
stopping
crystal defects
lattice parameters
buffers
transmission electron microscopy
microstructure
probes

Keywords

  • CdTe
  • high-angle annular-dark-field (HAADF) imaging
  • transmission electron microscopy (TEM)
  • ZnTe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy. / Zhao, W. F.; Jacobs, R. N.; Jaime-Vasquez, M.; Bubulac, L. O.; Smith, David.

In: Journal of Electronic Materials, Vol. 40, No. 8, 08.2011, p. 1733-1737.

Research output: Contribution to journalArticle

Zhao, W. F. ; Jacobs, R. N. ; Jaime-Vasquez, M. ; Bubulac, L. O. ; Smith, David. / Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy. In: Journal of Electronic Materials. 2011 ; Vol. 40, No. 8. pp. 1733-1737.
@article{b4d49da539ec48619024ef8f68ebd6a7,
title = "Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy",
abstract = "Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.",
keywords = "CdTe, high-angle annular-dark-field (HAADF) imaging, transmission electron microscopy (TEM), ZnTe",
author = "Zhao, {W. F.} and Jacobs, {R. N.} and M. Jaime-Vasquez and Bubulac, {L. O.} and David Smith",
year = "2011",
month = "8",
doi = "10.1007/s11664-011-1673-2",
language = "English (US)",
volume = "40",
pages = "1733--1737",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "8",

}

TY - JOUR

T1 - Microstructural characterization of CdTe(211)B/ZnTe/Si(211) heterostructures grown by molecular beam epitaxy

AU - Zhao, W. F.

AU - Jacobs, R. N.

AU - Jaime-Vasquez, M.

AU - Bubulac, L. O.

AU - Smith, David

PY - 2011/8

Y1 - 2011/8

N2 - Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.

AB - Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grown on Si(211) substrates using molecular beam epitaxy. Many {111}-type stacking faults were found to be present throughout the entire ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Local lattice parameter measurement and elemental profiles indicated that some intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd,Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively.

KW - CdTe

KW - high-angle annular-dark-field (HAADF) imaging

KW - transmission electron microscopy (TEM)

KW - ZnTe

UR - http://www.scopus.com/inward/record.url?scp=80051596148&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051596148&partnerID=8YFLogxK

U2 - 10.1007/s11664-011-1673-2

DO - 10.1007/s11664-011-1673-2

M3 - Article

VL - 40

SP - 1733

EP - 1737

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 8

ER -