Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy

S. Rujirawat, David Smith, J. P. Faurie, G. Neu, V. Nathan, S. Sivananthan

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

CdTe layers have been grown by molecular beam epitaxy on 3 inch nominal Si(211) under various conditions to study the effect of growth parameters on the structural quality. The microstructure of several samples was investigated by high resolution transmission electron microscopy (HRTEM). The orientation of the CdTe layers was affected strongly by the ZnTe buffer deposition temperature. Both single domain CdTe(133)B and CdTe(211)B were obtained by selective growth of ZnTe buffer layers at different temperatures. We demonstrated that thin ZnTe buffer layers (<2 nm) are sufficient to maintain the (211) orientation. CdTe deposited at ∼300°C grows with its normal lattice parameter from the onset of growth, demonstrating the effective strain accommodation of the buffer layer. The low tilt angle (<1°) between CdTe[211] and Si[211] indicates that high miscut Si(211) substrates are unnecessary. From low temperature photoluminescence, it is shown that Cd-substituted Li is the main residual impurity in the CdTe layer. In addition, deep emission bands are attributed to the presence of AsTe and AgCd acceptors. There is no evidence that copper plays a role in the impurity contamination of the samples.

Original languageEnglish (US)
Pages (from-to)1047-1052
Number of pages6
JournalJournal of Electronic Materials
Volume27
Issue number9
DOIs
StatePublished - Sep 1998

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Keywords

  • CdTe/Si
  • Dislocations
  • Heteroepitaxy
  • Molecular beam epitaxy (MBE)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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