TY - JOUR
T1 - Microstructural and dielectric properties of high permittivity (Pb, Ba) ZrO3 thin films by sol-gel processing
AU - Dey, Sandwip
AU - Barz, Robert
AU - Majhi, Prashant
AU - Wang, Chang Gong
PY - 2000/9/15
Y1 - 2000/9/15
N2 - High permittivity (Pb0.7, Ba0.3)ZrO3 (PBZ) films (60-110 nm) were fabricated by sol-gel processing on (111) Pt-passivated Si substrates, followed by rapid thermal annealing (RTA) at 550-700 °C for 5 minutes in oxygen. The randomly oriented grains were of the crystalline perovskite phase, with minor amounts of amorphous or nanocrystalline phase in the intergranular regions. The microstructure of the PBZ films was markedly influenced by substrate annealing and RTA temperature. At 10 kHz, the low-field dielectric permittivity and loss tangent of a 66 nm PBZ film were measured to be 932 and 0.03, respectively, giving a C/A of 12.5 μF/cm2.
AB - High permittivity (Pb0.7, Ba0.3)ZrO3 (PBZ) films (60-110 nm) were fabricated by sol-gel processing on (111) Pt-passivated Si substrates, followed by rapid thermal annealing (RTA) at 550-700 °C for 5 minutes in oxygen. The randomly oriented grains were of the crystalline perovskite phase, with minor amounts of amorphous or nanocrystalline phase in the intergranular regions. The microstructure of the PBZ films was markedly influenced by substrate annealing and RTA temperature. At 10 kHz, the low-field dielectric permittivity and loss tangent of a 66 nm PBZ film were measured to be 932 and 0.03, respectively, giving a C/A of 12.5 μF/cm2.
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U2 - 10.1143/jjap.39.l921
DO - 10.1143/jjap.39.l921
M3 - Article
AN - SCOPUS:0034266841
SN - 0021-4922
VL - 39
SP - L921-L924
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 9 A/B
ER -