Microstructural and dielectric properties of high permittivity (Pb, Ba) ZrO3 thin films by sol-gel processing

Sandwip Dey, Robert Barz, Prashant Majhi, Chang Gong Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High permittivity (Pb0.7, Ba0.3)ZrO3 (PBZ) films (60-110 nm) were fabricated by sol-gel processing on (111) Pt-passivated Si substrates, followed by rapid thermal annealing (RTA) at 550-700 °C for 5 minutes in oxygen. The randomly oriented grains were of the crystalline perovskite phase, with minor amounts of amorphous or nanocrystalline phase in the intergranular regions. The microstructure of the PBZ films was markedly influenced by substrate annealing and RTA temperature. At 10 kHz, the low-field dielectric permittivity and loss tangent of a 66 nm PBZ film were measured to be 932 and 0.03, respectively, giving a C/A of 12.5 μF/cm2.

Original languageEnglish (US)
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number9 A/B
StatePublished - Sep 15 2000

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Dielectric properties
Sol-gels
dielectric properties
Permittivity
Rapid thermal annealing
gels
permittivity
Thin films
annealing
thin films
Processing
Substrates
tangents
Perovskite
Annealing
Crystalline materials
microstructure
Microstructure
Oxygen
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Microstructural and dielectric properties of high permittivity (Pb, Ba) ZrO3 thin films by sol-gel processing. / Dey, Sandwip; Barz, Robert; Majhi, Prashant; Wang, Chang Gong.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 39, No. 9 A/B, 15.09.2000.

Research output: Contribution to journalArticle

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