Microstrain in laser-crystallized silicon islands on fused silica

S. A. Lyon, Robert Nemanich, N. M. Johnson, D. K. Biegelsen

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Residual strain in cw laser-crystallized silicon thin films has been measured with high spatial resolution (∼5 μm) by Raman spectroscopy. Thin films of polycrystalline silicon were defined into moated islands and patterned stripes on fused silica substrates and encapsulated with silicon nitride. Raman scattering was used to measure local strain at various points in and near crystallized islands, and the results reveal that the silicon film is under tension. The observations indicate that a major component of the stress in the film arises from pinning of the silicon at the silicon-fused silica interface at the solidification temperature followed by differential thermal contraction.

Original languageEnglish (US)
Pages (from-to)316-318
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number4
DOIs
StatePublished - 1982
Externally publishedYes

Fingerprint

silicon dioxide
silicon
lasers
thin films
silicon films
silicon nitrides
solidification
contraction
Raman spectroscopy
spatial resolution
Raman spectra
high resolution
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Microstrain in laser-crystallized silicon islands on fused silica. / Lyon, S. A.; Nemanich, Robert; Johnson, N. M.; Biegelsen, D. K.

In: Applied Physics Letters, Vol. 40, No. 4, 1982, p. 316-318.

Research output: Contribution to journalArticle

Lyon, S. A. ; Nemanich, Robert ; Johnson, N. M. ; Biegelsen, D. K. / Microstrain in laser-crystallized silicon islands on fused silica. In: Applied Physics Letters. 1982 ; Vol. 40, No. 4. pp. 316-318.
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