Microscopy Applications - Semiconductors

The transmission electron microscope (TEM) has evolved into a sophisticated instrument capable of providing structural and chemical information from solid materials over a wide range of magnification, to a level of spatial resolution that is unapproachable by most other techniques. The TEM offers a wide variety of imaging, diffraction, and microanalytical modes that can be used individually or in combination to extract essential information about semiconductor materials and devices. Techniques that are widely available and commonly used include transmission and high-resolution electron microscopy, electron-energy-loss and energy-dispersive X-ray spectroscopy, and convergent-beam electron diffraction. Advanced methods include electron holography, cathodoluminescence (CL) and Z-contrast annular-dark-field (ADF) imaging. The purpose of this article is to review briefly, with selected representative examples, applications of these various imaging, diffraction, and microanalytical modes of the TEM to semiconductor materials. These specific applications have been chosen to demonstrate the versatility and power of the TEM for solving relevant technological problems.