Microscopic theory and simulation of quantum-well intersubband absorption: A three-subband model

Jianzhong Li, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the nonparabolicity effect, we illuminate the underlying physics that shapes the spectra.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsM. Osinski, H. Amano, F. Henneberger
Pages95-102
Number of pages8
Volume5349
DOIs
StatePublished - 2004
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XII - San Jose, CA, United States
Duration: Jan 26 2004Jan 29 2004

Other

OtherPhysics and Simulation of Optoelectronic Devices XII
CountryUnited States
CitySan Jose, CA
Period1/26/041/29/04

    Fingerprint

Keywords

  • InAs quantum well
  • Intersubband transition
  • Linear absorption
  • Semiconductor heterostructure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Li, J., & Ning, C-Z. (2004). Microscopic theory and simulation of quantum-well intersubband absorption: A three-subband model. In M. Osinski, H. Amano, & F. Henneberger (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5349, pp. 95-102) https://doi.org/10.1117/12.537775