Abstract
We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the nonparabolicity effect, we illuminate the underlying physics that shapes the spectra.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | M. Osinski, H. Amano, F. Henneberger |
Pages | 95-102 |
Number of pages | 8 |
Volume | 5349 |
DOIs | |
State | Published - 2004 |
Externally published | Yes |
Event | Physics and Simulation of Optoelectronic Devices XII - San Jose, CA, United States Duration: Jan 26 2004 → Jan 29 2004 |
Other
Other | Physics and Simulation of Optoelectronic Devices XII |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/26/04 → 1/29/04 |
Keywords
- InAs quantum well
- Intersubband transition
- Linear absorption
- Semiconductor heterostructure
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics