Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

Jianzhong Li, K. I. Kolokolov, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Intersubband absorption spectra are analyzed using the density matrix theory under the second Born approximation. The intersubband semiconductor Bloch equations are derived from the first principles including electron-electron and electron-longitudinal optical phonon interactions, whereas electron-interface roughness scattering is considered using Ando's theory. A spurious-states-free 8-band k·p Hamiltonian is used, in conjunction with the envelope function approximation to calculate the electronic band structure self-consistently for type II InAs/AlSb multiple quantum well structures. We demonstrate the interplay of various physical processes in the absorption spectra in the mid-infrared frequency range.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsM. Osinski, H. Amano, P. Blood
Pages255-264
Number of pages10
Volume4986
DOIs
StatePublished - 2003
Externally publishedYes
EventPROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI - San Jose, CA, United States
Duration: Jan 27 2003Jan 31 2003

Other

OtherPROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI
CountryUnited States
CitySan Jose, CA
Period1/27/031/31/03

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Keywords

  • InAs/AlSb quantum well
  • Intersubband transition
  • Linear absorption
  • Type II semiconductor heterostructure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Li, J., Kolokolov, K. I., & Ning, C-Z. (2003). Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption. In M. Osinski, H. Amano, & P. Blood (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4986, pp. 255-264) https://doi.org/10.1117/12.474398