Abstract
Intersubband absorption spectra are analyzed using the density matrix theory under the second Born approximation. The intersubband semiconductor Bloch equations are derived from the first principles including electron-electron and electron-longitudinal optical phonon interactions, whereas electron-interface roughness scattering is considered using Ando's theory. A spurious-states-free 8-band k·p Hamiltonian is used, in conjunction with the envelope function approximation to calculate the electronic band structure self-consistently for type II InAs/AlSb multiple quantum well structures. We demonstrate the interplay of various physical processes in the absorption spectra in the mid-infrared frequency range.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | M. Osinski, H. Amano, P. Blood |
Pages | 255-264 |
Number of pages | 10 |
Volume | 4986 |
DOIs | |
State | Published - 2003 |
Externally published | Yes |
Event | PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI - San Jose, CA, United States Duration: Jan 27 2003 → Jan 31 2003 |
Other
Other | PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/27/03 → 1/31/03 |
Keywords
- InAs/AlSb quantum well
- Intersubband transition
- Linear absorption
- Type II semiconductor heterostructure
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics