Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers

F. Bertram, S. Srinivasan, L. Geng, Fernando Ponce, T. Riemann, J. Christen

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A direct correlation between the structural and luminescence properties of thick InxGa1-xN layers has been achieved on a microscopic scale using highly spatially resolved cathodoluminescence. Surface roughening is typically observed in growth by metalorganic vapor phase epitaxy of thick InxGa1-xN layers for x≥0.1. Although the film remains highly planar, craters and protrusions appear on the surface. These surface defects are associated with redshifted luminescence indicative of indium segregation, and are related to threading dislocations in the films.

Original languageEnglish (US)
Pages (from-to)3524-3526
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number19
DOIs
StatePublished - May 13 2002

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surface defects
luminescence
defects
cathodoluminescence
craters
vapor phase epitaxy
indium

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers. / Bertram, F.; Srinivasan, S.; Geng, L.; Ponce, Fernando; Riemann, T.; Christen, J.

In: Applied Physics Letters, Vol. 80, No. 19, 13.05.2002, p. 3524-3526.

Research output: Contribution to journalArticle

Bertram, F. ; Srinivasan, S. ; Geng, L. ; Ponce, Fernando ; Riemann, T. ; Christen, J. / Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers. In: Applied Physics Letters. 2002 ; Vol. 80, No. 19. pp. 3524-3526.
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