Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers

F. Bertram, S. Srinivasan, L. Geng, Fernando Ponce, T. Riemann, J. Christen

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A direct correlation between the structural and luminescence properties of thick InxGa1-xN layers has been achieved on a microscopic scale using highly spatially resolved cathodoluminescence. Surface roughening is typically observed in growth by metalorganic vapor phase epitaxy of thick InxGa1-xN layers for x≥0.1. Although the film remains highly planar, craters and protrusions appear on the surface. These surface defects are associated with redshifted luminescence indicative of indium segregation, and are related to threading dislocations in the films.

Original languageEnglish (US)
Pages (from-to)3524-3526
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - May 13 2002


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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