Microscopic carbon distribution in S alloys: A Raman scattering study

M. Meléndez-Lira, J. D. Lorentzen, Jose Menendez, W. Windl, N. G. Cave, R. Liu, J. W. Christiansen, N. D. Theodore, J. J. Candelaria

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Abstract

Si(Formula presented)C(Formula presented) alloys grown by solid-phase epitaxy of carbon-implanted Si were investigated with Raman spectroscopy. A comparison between the experimental Raman spectrum and the spectrum predicted from ab initio calculations shows that the carbon distribution in these samples is more randomized than in similar alloys grown by molecular-beam epitaxy. It is argued that epitaxial, layer-by-layer growth promotes the formation of ordered Si-C structures.

Original languageEnglish (US)
Pages (from-to)3648-3650
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume56
Issue number7
DOIs
StatePublished - Jan 1 1997

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Meléndez-Lira, M., Lorentzen, J. D., Menendez, J., Windl, W., Cave, N. G., Liu, R., Christiansen, J. W., Theodore, N. D., & Candelaria, J. J. (1997). Microscopic carbon distribution in S alloys: A Raman scattering study. Physical Review B - Condensed Matter and Materials Physics, 56(7), 3648-3650. https://doi.org/10.1103/PhysRevB.56.3648