Microscopic carbon distribution in S alloys: A Raman scattering study

M. Meléndez-Lira; J. D. Lorentzen; Jose Menendez; W. Windl; N. G. Cave; R. Liu; J. W. Christiansen; N. D. Theodore; J. J. Candelaria

doi:10.1103/PhysRevB.56.3648

Microscopic carbon distribution in S alloys: A Raman scattering study

M. Meléndez-Lira, J. D. Lorentzen, Jose Menendez, W. Windl, N. G. Cave, R. Liu, J. W. Christiansen, N. D. Theodore, J. J. Candelaria

Physics

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16 Scopus citations

Abstract

Si(Formula presented)C(Formula presented) alloys grown by solid-phase epitaxy of carbon-implanted Si were investigated with Raman spectroscopy. A comparison between the experimental Raman spectrum and the spectrum predicted from ab initio calculations shows that the carbon distribution in these samples is more randomized than in similar alloys grown by molecular-beam epitaxy. It is argued that epitaxial, layer-by-layer growth promotes the formation of ordered Si-C structures.

Original language	English (US)
Pages (from-to)	3648-3650
Number of pages	3
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	56
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.56.3648
State	Published - 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Microscopic carbon distribution in S alloys: A Raman scattering study",

abstract = "Si(Formula presented)C(Formula presented) alloys grown by solid-phase epitaxy of carbon-implanted Si were investigated with Raman spectroscopy. A comparison between the experimental Raman spectrum and the spectrum predicted from ab initio calculations shows that the carbon distribution in these samples is more randomized than in similar alloys grown by molecular-beam epitaxy. It is argued that epitaxial, layer-by-layer growth promotes the formation of ordered Si-C structures.",

author = "M. Mel{\'e}ndez-Lira and Lorentzen, {J. D.} and Jose Menendez and W. Windl and Cave, {N. G.} and R. Liu and Christiansen, {J. W.} and Theodore, {N. D.} and Candelaria, {J. J.}",

year = "1997",

doi = "10.1103/PhysRevB.56.3648",

language = "English (US)",

volume = "56",

pages = "3648--3650",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Microscopic carbon distribution in S alloys

T2 - A Raman scattering study

AU - Meléndez-Lira, M.

AU - Lorentzen, J. D.

AU - Menendez, Jose

AU - Windl, W.

AU - Cave, N. G.

AU - Liu, R.

AU - Christiansen, J. W.

AU - Theodore, N. D.

AU - Candelaria, J. J.

PY - 1997

Y1 - 1997

N2 - Si(Formula presented)C(Formula presented) alloys grown by solid-phase epitaxy of carbon-implanted Si were investigated with Raman spectroscopy. A comparison between the experimental Raman spectrum and the spectrum predicted from ab initio calculations shows that the carbon distribution in these samples is more randomized than in similar alloys grown by molecular-beam epitaxy. It is argued that epitaxial, layer-by-layer growth promotes the formation of ordered Si-C structures.

AB - Si(Formula presented)C(Formula presented) alloys grown by solid-phase epitaxy of carbon-implanted Si were investigated with Raman spectroscopy. A comparison between the experimental Raman spectrum and the spectrum predicted from ab initio calculations shows that the carbon distribution in these samples is more randomized than in similar alloys grown by molecular-beam epitaxy. It is argued that epitaxial, layer-by-layer growth promotes the formation of ordered Si-C structures.

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U2 - 10.1103/PhysRevB.56.3648

DO - 10.1103/PhysRevB.56.3648

M3 - Article

AN - SCOPUS:0040887947

SN - 1098-0121

VL - 56

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EP - 3650

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

ER -

Microscopic carbon distribution in S alloys: A Raman scattering study

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