Abstract
In this review, using thermodynamic and kinetic considerations, we explain (1) the proper implication of transport-limited growth, (2) various quasi-equilibrium, morphological and structural characteristics of thermally induced oxide precipitates and secondary crystallographic defects and (3) various electrically active and inactive impurity effects upon oxygen precipitation in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon-silica interface has shown promise on microscopic accounts of various experimentally observed precipitation behaviors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 11-17 |
| Number of pages | 7 |
| Journal | Materials Science and Engineering B |
| Volume | 4 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Oct 1989 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering