TY - JOUR
T1 - Microscopic aspects of oxygen precipitation in silicon
AU - Ponce, F. A.
AU - Hahn, S.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1989/10
Y1 - 1989/10
N2 - In this review, using thermodynamic and kinetic considerations, we explain (1) the proper implication of transport-limited growth, (2) various quasi-equilibrium, morphological and structural characteristics of thermally induced oxide precipitates and secondary crystallographic defects and (3) various electrically active and inactive impurity effects upon oxygen precipitation in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon-silica interface has shown promise on microscopic accounts of various experimentally observed precipitation behaviors.
AB - In this review, using thermodynamic and kinetic considerations, we explain (1) the proper implication of transport-limited growth, (2) various quasi-equilibrium, morphological and structural characteristics of thermally induced oxide precipitates and secondary crystallographic defects and (3) various electrically active and inactive impurity effects upon oxygen precipitation in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon-silica interface has shown promise on microscopic accounts of various experimentally observed precipitation behaviors.
UR - http://www.scopus.com/inward/record.url?scp=0024753887&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024753887&partnerID=8YFLogxK
U2 - 10.1016/0921-5107(89)90208-0
DO - 10.1016/0921-5107(89)90208-0
M3 - Article
AN - SCOPUS:0024753887
SN - 0921-5107
VL - 4
SP - 11
EP - 17
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-4
ER -