Micro-Raman mapping and analysis of indentation-induced phase transformations in germanium

Jae Il Jang, M. J. Lance, Songqing Wen, J. J. Huening, Robert Nemanich, G. M. Pharr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Although it has been confirmed by diamond anvil cell experiments that germanium transforms under hydrostatic pressure from the normal diamond cubic phase (Ge-I) to the metallic β-tin phase (Ge-II) and re-transforms to Ge-III (ST12 structure) or Ge-IV (BC8 structure) during release of the pressure, there are still controversies about whether the same transformations occur during nanoindentation. Here, we present new evidence of indentation-induced phase transformations in germanium. Nanoindentation experiments were performed on a (100) Ge single crystal using two triangular pyramidal indenters with different tip angles - the common Berkovich and the sharper cube-corner. Although the indentation load-displacement curves do not show any of the characteristics of phase transformation that are well-known for silicon, micro-Raman spectroscopy in conjunction with scanning electron microscopy reveals that phase transformations to amorphous and metastable crystalline phases do indeed occur. However, the transformations are observed reproducibly only for the cube-corner indenter.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsS.N. Basu, J.E. Krzanowski, J. Patschneider, Y. Gogotsi
Pages277-282
Number of pages6
Volume843
StatePublished - 2005
Externally publishedYes
EventSurface Engineering 2004 - Fundamentals and Applications - Boston, MA, United States
Duration: Nov 30 2004Dec 2 2004

Other

OtherSurface Engineering 2004 - Fundamentals and Applications
CountryUnited States
CityBoston, MA
Period11/30/0412/2/04

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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