MgB 2 tunnel junctions with native or thermal oxide barriers

Rakesh Singh; R. Gandikota; J. Kim; Nathan Newman; J. M. Rowell

doi:10.1063/1.2226546

MgB ₂ tunnel junctions with native or thermal oxide barriers

Rakesh Singh, R. Gandikota, J. Kim, Nathan Newman, J. M. Rowell

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

MgB ₂ tunnel junctions (MgB ₂/barrier/MgB ₂) were fabricated using a native oxide grown on the bottom MgB ₂ film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300°C, even over junction areas of ∼1 mm ². Studies of such junctions and those of the type MgB ₂/native or thermal oxide/metal (Pb, Au, or Ag) show that tunnel barriers grown on MgB ² exhibit a wide range of barrier heights and widths.

Original language	English (US)
Article number	042512
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2226546
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "MgB 2 tunnel junctions with native or thermal oxide barriers",

abstract = "MgB 2 tunnel junctions (MgB 2/barrier/MgB 2) were fabricated using a native oxide grown on the bottom MgB 2 film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300°C, even over junction areas of ∼1 mm 2. Studies of such junctions and those of the type MgB 2/native or thermal oxide/metal (Pb, Au, or Ag) show that tunnel barriers grown on MgB 2 exhibit a wide range of barrier heights and widths.",

author = "Rakesh Singh and R. Gandikota and J. Kim and Nathan Newman and Rowell, {J. M.}",

note = "Funding Information: The authors thank Deborah Van Vechten for her encouragement and support, as well as Hongxue Liu for assistance in the PPMS measurement. The authors would like to acknowledge the Office of Naval Research for support of this work under Contract No. N00014-05-1-0105.",

year = "2006",

doi = "10.1063/1.2226546",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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T1 - MgB 2 tunnel junctions with native or thermal oxide barriers

AU - Singh, Rakesh

AU - Gandikota, R.

AU - Kim, J.

AU - Newman, Nathan

AU - Rowell, J. M.

N1 - Funding Information: The authors thank Deborah Van Vechten for her encouragement and support, as well as Hongxue Liu for assistance in the PPMS measurement. The authors would like to acknowledge the Office of Naval Research for support of this work under Contract No. N00014-05-1-0105.

PY - 2006

Y1 - 2006

N2 - MgB 2 tunnel junctions (MgB 2/barrier/MgB 2) were fabricated using a native oxide grown on the bottom MgB 2 film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300°C, even over junction areas of ∼1 mm 2. Studies of such junctions and those of the type MgB 2/native or thermal oxide/metal (Pb, Au, or Ag) show that tunnel barriers grown on MgB 2 exhibit a wide range of barrier heights and widths.

AB - MgB 2 tunnel junctions (MgB 2/barrier/MgB 2) were fabricated using a native oxide grown on the bottom MgB 2 film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300°C, even over junction areas of ∼1 mm 2. Studies of such junctions and those of the type MgB 2/native or thermal oxide/metal (Pb, Au, or Ag) show that tunnel barriers grown on MgB 2 exhibit a wide range of barrier heights and widths.

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DO - 10.1063/1.2226546

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JF - Applied Physics Letters

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ER -

MgB ₂ tunnel junctions with native or thermal oxide barriers

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