Methodical design approaches to radiation effects analysis and mitigation in flip-flop circuits

Lawrence T. Clark, Sandeep Shambhulingaiah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

With transistor dimensions shrinking due to continued scaling, integrated circuits are increasingly susceptible to radiation upset. This paper presents a systematic methodology for evaluating circuit hardness, as well as graph clustering approaches to determine effective node separation to protect against upset due to multiple node charge collection. The methodology is circuit simulation based, making it efficient and usable by circuit designers. Example designs are presented to demonstrate the analysis and clustering for real flip-flop designs. Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 27% and 19.5% respectively.

Original languageEnglish (US)
Title of host publicationProceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI
PublisherIEEE Computer Society
Pages595-600
Number of pages6
ISBN (Electronic)9781479937639
DOIs
StatePublished - Sep 18 2014
Event2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 - Tampa, United States
Duration: Jul 9 2014Jul 11 2014

Other

Other2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014
Country/TerritoryUnited States
CityTampa
Period7/9/147/11/14

Keywords

  • Flip-flop (FF)
  • Multiple node charge collection (MNCC)
  • Radiation hardening by design (RHBD)
  • Single event transient (SET)
  • Single event upset (SEU)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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