Abstract
With transistor dimensions shrinking due to continued scaling, integrated circuits are increasingly susceptible to radiation upset. This paper presents a systematic methodology for evaluating circuit hardness, as well as graph clustering approaches to determine effective node separation to protect against upset due to multiple node charge collection. The methodology is circuit simulation based, making it efficient and usable by circuit designers. Example designs are presented to demonstrate the analysis and clustering for real flip-flop designs. Finally, the methodology is utilized to provide critical node separation for a new hardened flip-flop design that reduces the power and area by 27% and 19.5% respectively.
Original language | English (US) |
---|---|
Title of host publication | Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI |
Publisher | IEEE Computer Society |
Pages | 595-600 |
Number of pages | 6 |
ISBN (Electronic) | 9781479937639 |
DOIs | |
State | Published - Sep 18 2014 |
Event | 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 - Tampa, United States Duration: Jul 9 2014 → Jul 11 2014 |
Other
Other | 2014 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2014 |
---|---|
Country/Territory | United States |
City | Tampa |
Period | 7/9/14 → 7/11/14 |
Keywords
- Flip-flop (FF)
- Multiple node charge collection (MNCC)
- Radiation hardening by design (RHBD)
- Single event transient (SET)
- Single event upset (SEU)
ASJC Scopus subject areas
- Hardware and Architecture
- Control and Systems Engineering
- Electrical and Electronic Engineering