Method for Relieving Misfit Strain in Nitride Semiconductor Epitaxy

Fernando Ponce (Inventor)

Research output: Patent

Abstract

The Microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgron GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislcoations, slip occurs with the formation of periodic arrays fo misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces.
Original languageEnglish (US)
StatePublished - Jun 7 2006

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title = "Method for Relieving Misfit Strain in Nitride Semiconductor Epitaxy",
abstract = "The Microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgron GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislcoations, slip occurs with the formation of periodic arrays fo misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces.",
author = "Fernando Ponce",
year = "2006",
month = "6",
day = "7",
language = "English (US)",
type = "Patent",

}

TY - PAT

T1 - Method for Relieving Misfit Strain in Nitride Semiconductor Epitaxy

AU - Ponce, Fernando

PY - 2006/6/7

Y1 - 2006/6/7

N2 - The Microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgron GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislcoations, slip occurs with the formation of periodic arrays fo misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces.

AB - The Microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgron GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislcoations, slip occurs with the formation of periodic arrays fo misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces.

M3 - Patent

ER -