TY - GEN
T1 - Metamorphic GaInP/GaInAs/Ge solar cells
AU - King, R. R.
AU - Haddad, M.
AU - Isshiki, T.
AU - Colter, P.
AU - Ermer, J.
AU - Yoon, H.
AU - Joslin, D. E.
AU - Karam, N. H.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - High-efficiency, metamorphic multijunction cells have been fabricated by growing GaInP/GaInAs subcells that are lattice-mismatched to an active Ge substrate, resulting in GaInP/GaInAs/Ge 3-junction (3J) cells. The efficiency dependence of this 3J cell on lattice-constant of the top two cells and on sub-lattice ordering in the GaInP top cell is presented. A variety of composition-graded buffers have been explored through X-ray diffraction reciprocal space mapping to measure strain in the cell layers, and transmission electron microscopy to minimize misfit and threading dislocations. Quantum efficiency is measured for metamorphic 1.3-eV Ga0.92In0.08As (8%-In GalnAs) cells and 1.75-eV Ga0.43In0.57P cells grown on a Ge substrate, as well as for the 3J cell based on 4%-In GalnAs. Three-junction Ga0.43In0.57P/Ga0.92In0.08As/Ge cells with 0.50% lattice-mismatch to the Ge substrate are measured to have AM0 efficiency of 27.3% (0.1353 W/cm2, 28°C), similar to high-efficiency, conventional GaInP/GaAs/Ge 3-junction cells based on the GaAs lattice constant.
AB - High-efficiency, metamorphic multijunction cells have been fabricated by growing GaInP/GaInAs subcells that are lattice-mismatched to an active Ge substrate, resulting in GaInP/GaInAs/Ge 3-junction (3J) cells. The efficiency dependence of this 3J cell on lattice-constant of the top two cells and on sub-lattice ordering in the GaInP top cell is presented. A variety of composition-graded buffers have been explored through X-ray diffraction reciprocal space mapping to measure strain in the cell layers, and transmission electron microscopy to minimize misfit and threading dislocations. Quantum efficiency is measured for metamorphic 1.3-eV Ga0.92In0.08As (8%-In GalnAs) cells and 1.75-eV Ga0.43In0.57P cells grown on a Ge substrate, as well as for the 3J cell based on 4%-In GalnAs. Three-junction Ga0.43In0.57P/Ga0.92In0.08As/Ge cells with 0.50% lattice-mismatch to the Ge substrate are measured to have AM0 efficiency of 27.3% (0.1353 W/cm2, 28°C), similar to high-efficiency, conventional GaInP/GaAs/Ge 3-junction cells based on the GaAs lattice constant.
UR - http://www.scopus.com/inward/record.url?scp=84949564999&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949564999&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2000.916050
DO - 10.1109/PVSC.2000.916050
M3 - Conference contribution
AN - SCOPUS:84949564999
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 982
EP - 985
BT - Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Y2 - 15 September 2000 through 22 September 2000
ER -