Metamorphic GaInP/GaInAs/Ge solar cells

Richard King, M. Haddad, T. Isshiki, P. Colter, J. Ermer, H. Yoon, D. E. Joslin, N. H. Karam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

38 Citations (Scopus)

Abstract

High-efficiency, metamorphic multijunction cells have been fabricated by growing GaInP/GaInAs subcells that are lattice-mismatched to an active Ge substrate, resulting in GaInP/GaInAs/Ge 3-junction (3J) cells. The efficiency dependence of this 3J cell on lattice-constant of the top two cells and on sub-lattice ordering in the GaInP top cell is presented. A variety of composition-graded buffers have been explored through X-ray diffraction reciprocal space mapping to measure strain in the cell layers, and transmission electron microscopy to minimize misfit and threading dislocations. Quantum efficiency is measured for metamorphic 1.3-eV Ga0.92In0.08As (8%-In GalnAs) cells and 1.75-eV Ga0.43In0.57P cells grown on a Ge substrate, as well as for the 3J cell based on 4%-In GalnAs. Three-junction Ga0.43In0.57P/Ga0.92In0.08As/Ge cells with 0.50% lattice-mismatch to the Ge substrate are measured to have AM0 efficiency of 27.3% (0.1353 W/cm2, 28°C), similar to high-efficiency, conventional GaInP/GaAs/Ge 3-junction cells based on the GaAs lattice constant.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages982-985
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period9/15/009/22/00

Fingerprint

Solar cells
Lattice constants
Substrates
Cells
Lattice mismatch
Quantum efficiency
Transmission electron microscopy
X ray diffraction
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

King, R., Haddad, M., Isshiki, T., Colter, P., Ermer, J., Yoon, H., ... Karam, N. H. (2000). Metamorphic GaInP/GaInAs/Ge solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 982-985). [916050] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.916050

Metamorphic GaInP/GaInAs/Ge solar cells. / King, Richard; Haddad, M.; Isshiki, T.; Colter, P.; Ermer, J.; Yoon, H.; Joslin, D. E.; Karam, N. H.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 982-985 916050.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

King, R, Haddad, M, Isshiki, T, Colter, P, Ermer, J, Yoon, H, Joslin, DE & Karam, NH 2000, Metamorphic GaInP/GaInAs/Ge solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 916050, Institute of Electrical and Electronics Engineers Inc., pp. 982-985, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.916050
King R, Haddad M, Isshiki T, Colter P, Ermer J, Yoon H et al. Metamorphic GaInP/GaInAs/Ge solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 982-985. 916050 https://doi.org/10.1109/PVSC.2000.916050
King, Richard ; Haddad, M. ; Isshiki, T. ; Colter, P. ; Ermer, J. ; Yoon, H. ; Joslin, D. E. ; Karam, N. H. / Metamorphic GaInP/GaInAs/Ge solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 982-985
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