Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy

J. S. Chan; T. C. Fu; N. W. Cheung; Nathan Newman; X. Liu; J. T. Ross; M. D. Rubin; P. Chu

Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy

J. S. Chan, T. C. Fu, N. W. Cheung, Nathan Newman, X. Liu, J. T. Ross, M. D. Rubin, P. Chu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 ^-2 to 10 ^-6 Ω-cm ²) which changed with annealing.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	223-227
Number of pages	5
Volume	339
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

Other

Other	Proceedings of the 1994 MRS Spring Meeting
City	San Francisco, CA, USA
Period	4/4/94 → 4/8/94

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy",

abstract = "Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 -2 to 10 -6 Ω-cm 2) which changed with annealing. ",

author = "Chan, {J. S.} and Fu, {T. C.} and Cheung, {N. W.} and Nathan Newman and X. Liu and Ross, {J. T.} and Rubin, {M. D.} and P. Chu",

year = "1994",

language = "English (US)",

volume = "339",

pages = "223--227",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

}

TY - GEN

T1 - Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy

AU - Chan, J. S.

AU - Fu, T. C.

AU - Cheung, N. W.

AU - Newman, Nathan

AU - Liu, X.

AU - Ross, J. T.

AU - Rubin, M. D.

AU - Chu, P.

PY - 1994

Y1 - 1994

N2 - Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 -2 to 10 -6 Ω-cm 2) which changed with annealing.

AB - Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 -2 to 10 -6 Ω-cm 2) which changed with annealing.

UR - http://www.scopus.com/inward/record.url?scp=0028731991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028731991&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028731991

VL - 339

SP - 223

EP - 227

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy

Abstract

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ASJC Scopus subject areas

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