Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy

J. S. Chan, T. C. Fu, N. W. Cheung, Nathan Newman, X. Liu, J. T. Ross, M. D. Rubin, P. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 -2 to 10 -6 Ω-cm 2) which changed with annealing.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages223-227
Number of pages5
Volume339
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/4/944/8/94

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chan, J. S., Fu, T. C., Cheung, N. W., Newman, N., Liu, X., Ross, J. T., Rubin, M. D., & Chu, P. (1994). Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy. In Materials Research Society Symposium - Proceedings (Vol. 339, pp. 223-227). Materials Research Society.