Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy

J. S. Chan, T. C. Fu, N. W. Cheung, Nathan Newman, X. Liu, J. T. Ross, M. D. Rubin, P. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 -2 to 10 -6 Ω-cm 2) which changed with annealing.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages223-227
Number of pages5
Volume339
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/4/944/8/94

Fingerprint

Metallizing
Molecular beam epitaxy
Ion beams
Metals
Thin films
Gallium nitride
Ohmic contacts
Aluminum Oxide
Sapphire
Electric lines
Annealing
Ions
Substrates
gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chan, J. S., Fu, T. C., Cheung, N. W., Newman, N., Liu, X., Ross, J. T., ... Chu, P. (1994). Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy. In Materials Research Society Symposium - Proceedings (Vol. 339, pp. 223-227). Materials Research Society.

Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy. / Chan, J. S.; Fu, T. C.; Cheung, N. W.; Newman, Nathan; Liu, X.; Ross, J. T.; Rubin, M. D.; Chu, P.

Materials Research Society Symposium - Proceedings. Vol. 339 Materials Research Society, 1994. p. 223-227.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chan, JS, Fu, TC, Cheung, NW, Newman, N, Liu, X, Ross, JT, Rubin, MD & Chu, P 1994, Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy. in Materials Research Society Symposium - Proceedings. vol. 339, Materials Research Society, pp. 223-227, Proceedings of the 1994 MRS Spring Meeting, San Francisco, CA, USA, 4/4/94.
Chan JS, Fu TC, Cheung NW, Newman N, Liu X, Ross JT et al. Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy. In Materials Research Society Symposium - Proceedings. Vol. 339. Materials Research Society. 1994. p. 223-227
Chan, J. S. ; Fu, T. C. ; Cheung, N. W. ; Newman, Nathan ; Liu, X. ; Ross, J. T. ; Rubin, M. D. ; Chu, P. / Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy. Materials Research Society Symposium - Proceedings. Vol. 339 Materials Research Society, 1994. pp. 223-227
@inproceedings{6ca3d86bf553440a9fad7f6ab84a5d69,
title = "Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy",
abstract = "Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 -2 to 10 -6 Ω-cm 2) which changed with annealing.",
author = "Chan, {J. S.} and Fu, {T. C.} and Cheung, {N. W.} and Nathan Newman and X. Liu and Ross, {J. T.} and Rubin, {M. D.} and P. Chu",
year = "1994",
language = "English (US)",
volume = "339",
pages = "223--227",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy

AU - Chan, J. S.

AU - Fu, T. C.

AU - Cheung, N. W.

AU - Newman, Nathan

AU - Liu, X.

AU - Ross, J. T.

AU - Rubin, M. D.

AU - Chu, P.

PY - 1994

Y1 - 1994

N2 - Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 -2 to 10 -6 Ω-cm 2) which changed with annealing.

AB - Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10 -2 to 10 -6 Ω-cm 2) which changed with annealing.

UR - http://www.scopus.com/inward/record.url?scp=0028731991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028731991&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028731991

VL - 339

SP - 223

EP - 227

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -