Abstract

ZnO/Cu/ZnO multilayer films have been obtained with carrier concentration of 1.2×1022 cm-3 and resistivity of 6.9×10-5 Ω-cm at the optimum copper layer thickness. The conduction mechanism involves metal to oxide carrier injection at low copper layer thickness prior to the formation of a continuous metal conduction pathway at higher copper thicknesses. The peak transmittance, photopic averaged transmittance, and Haacke figure of merit are 88%, 75%, and 8.7×10 -3 Ω-1, respectively. Optical transmission is elucidated in terms of copper's absorption due to d-band to Fermi surface transitions at short wavelengths and reflectance combined with scattering losses at long wavelengths. A Burstein-Moss shift in the band gap of the films is seen to take place with increase in thickness of the copper layer. Annealing at 150°C for up to 24 hours in a reducing ambient(Ar + 5%H2) was found to have negligible effect on the properties of the films adding to the significance of the room temperature results obtained.

Original languageEnglish (US)
Title of host publicationAdvanced Metallization Conference 2009, AMC 2009
Pages269-279
Number of pages11
StatePublished - Nov 29 2010
Event26th Advanced Metallization Conference, AMC 2009 - Baltimore, MD, United States
Duration: Oct 13 2009Oct 15 2009

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

Other26th Advanced Metallization Conference, AMC 2009
CountryUnited States
CityBaltimore, MD
Period10/13/0910/15/09

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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  • Cite this

    Sivaramakrishnan, K., Theodore, N. D., Moulder, J. F., & Alford, T. (2010). Metallic conduction in ZnO/Cu/ZnO thin films. In Advanced Metallization Conference 2009, AMC 2009 (pp. 269-279). (Advanced Metallization Conference (AMC)).