METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES.

W. E. Spicer, S. Pan, D. Mo, Nathan Newman, P. Mahowald, T. Kendelewicz, S. Eglash

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Parameters are identified which give different pinning positions on n- and p-type semiconductor materials. Experimentally, Cs is in disagreement with any metallic approximation at the interface. Results for thick noble metals (Au, Cu, and Ag) deposited on clean GaAs(110) formed by cleaving in UHV are reported. An atomic explanation is suggested and related to interfacial chemistry. Differences are found between the thin and thick pinning positions of Al on GaAs.

Original languageEnglish (US)
Pages (from-to)476-480
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume2
Issue number3
DOIs
StatePublished - Jul 1984
Externally publishedYes

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Precious metals
Surface chemistry
Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

Cite this

METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES. / Spicer, W. E.; Pan, S.; Mo, D.; Newman, Nathan; Mahowald, P.; Kendelewicz, T.; Eglash, S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 2, No. 3, 07.1984, p. 476-480.

Research output: Contribution to journalArticle

Spicer, W. E. ; Pan, S. ; Mo, D. ; Newman, Nathan ; Mahowald, P. ; Kendelewicz, T. ; Eglash, S. / METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1984 ; Vol. 2, No. 3. pp. 476-480.
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