METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES.

W. E. Spicer, S. Pan, D. Mo, N. Newman, P. Mahowald, T. Kendelewicz, S. Eglash

Research output: Contribution to journalConference article

23 Scopus citations

Abstract

Parameters are identified which give different pinning positions on n- and p-type semiconductor materials. Experimentally, Cs is in disagreement with any metallic approximation at the interface. Results for thick noble metals (Au, Cu, and Ag) deposited on clean GaAs(110) formed by cleaving in UHV are reported. An atomic explanation is suggested and related to interfacial chemistry. Differences are found between the thin and thick pinning positions of Al on GaAs.

Original languageEnglish (US)
Pages (from-to)476-480
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume2
Issue number3
DOIs
StatePublished - Jan 1 1984
Externally publishedYes
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th - Pinehurst, NC, USA
Duration: Jan 31 1984Feb 2 1984

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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