Metal-oxide RRAM

H. S.Philip Wong, Heng Yuan Lee, Shimeng Yu, Yu Sheng Chen, Yi Wu, Pang Shiu Chen, Byoungil Lee, Frederick T. Chen, Ming Jinn Tsai

Research output: Contribution to journalArticlepeer-review

1538 Scopus citations

Abstract

In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Original languageEnglish (US)
Article number6193402
Pages (from-to)1951-1970
Number of pages20
JournalProceedings of the IEEE
Volume100
Issue number6
DOIs
StatePublished - Jun 2012

Keywords

  • OxRAM
  • ReRAM
  • emerging memory
  • metal oxide
  • multibit memory
  • nonvolatile memory
  • resistance change memory
  • resistive switching memory
  • resistive switching random access memory (RRAM)
  • solid-state memory

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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