@article{0f83a70bcbf441828f7c584846fd4972,
title = "Metal-oxide RRAM",
abstract = "In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.",
keywords = "OxRAM, ReRAM, emerging memory, metal oxide, multibit memory, nonvolatile memory, resistance change memory, resistive switching memory, resistive switching random access memory (RRAM), solid-state memory",
author = "Wong, {H. S.Philip} and Lee, {Heng Yuan} and Shimeng Yu and Chen, {Yu Sheng} and Yi Wu and Chen, {Pang Shiu} and Byoungil Lee and Chen, {Frederick T.} and Tsai, {Ming Jinn}",
note = "Funding Information: Manuscript received November 12, 2010; revised March 17, 2011; accepted February 7, 2012. Date of publication May 2, 2012; date of current version May 10, 2012. This work was supported in part by the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI), the National Science Foundation (NSF, ECCS 0950305), the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI Supplement to the NSF NSEC Center for Probing the Nanoscale (CPN), and the C2S2 and MSD Focus Center, two of six research centers funded under the Focus Center Research Program (FCRP), a SRC subsidiary. The work of S. Yu, B. Lee, and Y. Wu was additionally supported by the Stanford Graduate Fellowship, the Samsung Scholarship, and the O. G. Villard Engineering Fund at Stanford University, respectively. This work was also supported in part by the Taiwan{\textquoteright}s Ministry of Economic Affairs (MOEA) and CMOS wafers provided by Taiwan Semiconductor Manufacturing Corporation (TSMC). H.-S. P. Wong, S. Yu, and Y. Wu are with the Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA (e-mail: hspwong@stanford.edu). H.-Y. Lee, F. T. Chen, and M.-J. Tsai are with the Nanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (ITRI), Chutung, Hsinchu 31040, Taiwan. Y.-S. Chen is with the Nanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (ITRI), Chutung, Hsinchu 31040, Taiwan and also with the Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan. P.-S. Chen is with the Nanoelectronic Technology Division, Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (ITRI), Chutung, Hsinchu 31040, Taiwan and also with the Department of Chemical and Materials Engineering, Ming Hsin University of Science and Technology, Hsinchu 30401, Taiwan. B. Lee was with the Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA. He is now with Samsung Electronics, Hwasung 445-701, Korea.",
year = "2012",
month = jun,
doi = "10.1109/JPROC.2012.2190369",
language = "English (US)",
volume = "100",
pages = "1951--1970",
journal = "Proceedings of the IEEE",
issn = "0018-9219",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}