Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire

Qhalid Fareed, Vinod Adivarahan, Mikhail Gaevski, Thomas Katona, Jin Mei, Fernando Ponce, Asif Khan

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We present a novel metalorganic hydride vapor phase epitaxy (MPHVPE) approach for lateral epitaxy of high-quality crack-free AlN layers over sapphire with thicknesses in excess of 20 μm. Feasibility of depositing thick AlN buffer layers and device quality AlxGa1-xN heterojunctions in a single chamber and growth run using metalorganic chemical vapor deposition and hydride vapor phase epitaxy growths either sequentially or simultaneously is demonstrated. Transmission electron microscopy, atomic force microscopy, and cathodoluminescence analyses confirm the viability of the MGHVPE grown layers for subsequent device fabrication.

Original languageEnglish (US)
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number29-32
DOIs
StatePublished - Aug 10 2007

Fingerprint

Vapor phase epitaxy
Sapphire
Hydrides
vapor phase epitaxy
hydrides
sapphire
Cathodoluminescence
Metallorganic chemical vapor deposition
Buffer layers
Metals
Epitaxial growth
metals
Heterojunctions
Atomic force microscopy
Transmission electron microscopy
cathodoluminescence
Cracks
viability
Fabrication
epitaxy

Keywords

  • Aluminum nitride
  • Cathodoluminescence
  • Metalorganic hydride vapor phase epitaxy
  • Ultraviolet light emitting diode

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire. / Fareed, Qhalid; Adivarahan, Vinod; Gaevski, Mikhail; Katona, Thomas; Mei, Jin; Ponce, Fernando; Khan, Asif.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 29-32, 10.08.2007.

Research output: Contribution to journalArticle

Fareed, Qhalid ; Adivarahan, Vinod ; Gaevski, Mikhail ; Katona, Thomas ; Mei, Jin ; Ponce, Fernando ; Khan, Asif. / Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire. In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 29-32.
@article{33db4f1e82d244b3837f8a5abb5f7604,
title = "Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire",
abstract = "We present a novel metalorganic hydride vapor phase epitaxy (MPHVPE) approach for lateral epitaxy of high-quality crack-free AlN layers over sapphire with thicknesses in excess of 20 μm. Feasibility of depositing thick AlN buffer layers and device quality AlxGa1-xN heterojunctions in a single chamber and growth run using metalorganic chemical vapor deposition and hydride vapor phase epitaxy growths either sequentially or simultaneously is demonstrated. Transmission electron microscopy, atomic force microscopy, and cathodoluminescence analyses confirm the viability of the MGHVPE grown layers for subsequent device fabrication.",
keywords = "Aluminum nitride, Cathodoluminescence, Metalorganic hydride vapor phase epitaxy, Ultraviolet light emitting diode",
author = "Qhalid Fareed and Vinod Adivarahan and Mikhail Gaevski and Thomas Katona and Jin Mei and Fernando Ponce and Asif Khan",
year = "2007",
month = "8",
day = "10",
doi = "10.1143/JJAP.46.L752",
language = "English (US)",
volume = "46",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "29-32",

}

TY - JOUR

T1 - Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire

AU - Fareed, Qhalid

AU - Adivarahan, Vinod

AU - Gaevski, Mikhail

AU - Katona, Thomas

AU - Mei, Jin

AU - Ponce, Fernando

AU - Khan, Asif

PY - 2007/8/10

Y1 - 2007/8/10

N2 - We present a novel metalorganic hydride vapor phase epitaxy (MPHVPE) approach for lateral epitaxy of high-quality crack-free AlN layers over sapphire with thicknesses in excess of 20 μm. Feasibility of depositing thick AlN buffer layers and device quality AlxGa1-xN heterojunctions in a single chamber and growth run using metalorganic chemical vapor deposition and hydride vapor phase epitaxy growths either sequentially or simultaneously is demonstrated. Transmission electron microscopy, atomic force microscopy, and cathodoluminescence analyses confirm the viability of the MGHVPE grown layers for subsequent device fabrication.

AB - We present a novel metalorganic hydride vapor phase epitaxy (MPHVPE) approach for lateral epitaxy of high-quality crack-free AlN layers over sapphire with thicknesses in excess of 20 μm. Feasibility of depositing thick AlN buffer layers and device quality AlxGa1-xN heterojunctions in a single chamber and growth run using metalorganic chemical vapor deposition and hydride vapor phase epitaxy growths either sequentially or simultaneously is demonstrated. Transmission electron microscopy, atomic force microscopy, and cathodoluminescence analyses confirm the viability of the MGHVPE grown layers for subsequent device fabrication.

KW - Aluminum nitride

KW - Cathodoluminescence

KW - Metalorganic hydride vapor phase epitaxy

KW - Ultraviolet light emitting diode

UR - http://www.scopus.com/inward/record.url?scp=34548412809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548412809&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.L752

DO - 10.1143/JJAP.46.L752

M3 - Article

VL - 46

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 29-32

ER -