Abstract
We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 311-314 |
| Number of pages | 4 |
| Journal | Superlattices and Microstructures |
| Volume | 27 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2000 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Metal-insulator transition in quantum dot arrays. / Shailos, A.; El Hassan, M.; Prasad, C.; Bird, J. P.; Ferry, D. K.; Lin, L. H.; Aoki, N.; Nakao, K.; Ochiai, Y.; Ishibashi, K.; Aoyagi, Y.; Sugano, T.
In: Superlattices and Microstructures, Vol. 27, No. 5, 05.2000, p. 311-314.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Metal-insulator transition in quantum dot arrays
AU - Shailos, A.
AU - El Hassan, M.
AU - Prasad, C.
AU - Bird, J. P.
AU - Ferry, D. K.
AU - Lin, L. H.
AU - Aoki, N.
AU - Nakao, K.
AU - Ochiai, Y.
AU - Ishibashi, K.
AU - Aoyagi, Y.
AU - Sugano, T.
PY - 2000/5
Y1 - 2000/5
N2 - We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.
AB - We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.
UR - http://www.scopus.com/inward/record.url?scp=0034187958&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034187958&partnerID=8YFLogxK
U2 - 10.1006/spmi.2000.0832
DO - 10.1006/spmi.2000.0832
M3 - Article
VL - 27
SP - 311
EP - 314
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 5
ER -