Metal-insulator transition in quantum dot arrays

A. Shailos; M. El Hassan; C. Prasad; J. P. Bird; D. K. Ferry; L. H. Lin; N. Aoki; K. Nakao; Y. Ochiai; K. Ishibashi; Y. Aoyagi; T. Sugano

doi:10.1006/spmi.2000.0832

Metal-insulator transition in quantum dot arrays

A. Shailos, M. El Hassan, C. Prasad, J. P. Bird, D. K. Ferry, L. H. Lin, N. Aoki, K. Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.

Original language	English (US)
Pages (from-to)	311-314
Number of pages	4
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0832
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Metal-insulator transition in quantum dot arrays",

abstract = "We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.",

author = "A. Shailos and {El Hassan}, M. and C. Prasad and Bird, {J. P.} and Ferry, {D. K.} and Lin, {L. H.} and N. Aoki and K. Nakao and Y. Ochiai and K. Ishibashi and Y. Aoyagi and T. Sugano",

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TY - JOUR

T1 - Metal-insulator transition in quantum dot arrays

AU - Shailos, A.

AU - El Hassan, M.

AU - Prasad, C.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Lin, L. H.

AU - Aoki, N.

AU - Nakao, K.

AU - Ochiai, Y.

AU - Ishibashi, K.

AU - Aoyagi, Y.

AU - Sugano, T.

PY - 2000/5

Y1 - 2000/5

N2 - We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.

AB - We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.

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U2 - 10.1006/spmi.2000.0832

DO - 10.1006/spmi.2000.0832

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VL - 27

SP - 311

EP - 314

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 5

T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

Y2 - 6 December 1999 through 10 December 1999

ER -

Metal-insulator transition in quantum dot arrays

Abstract

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