Abstract
We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 311-314 |
| Number of pages | 4 |
| Journal | Superlattices and Microstructures |
| Volume | 27 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2000 |
| Event | 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Shailos, A., El Hassan, M., Prasad, C., Bird, J. P., Ferry, D. K., Lin, L. H., Aoki, N., Nakao, K., Ochiai, Y., Ishibashi, K., Aoyagi, Y., & Sugano, T. (2000). Metal-insulator transition in quantum dot arrays. Superlattices and Microstructures, 27(5), 311-314. https://doi.org/10.1006/spmi.2000.0832