Metal-induced crystallization of hydrogenated amorphous Si films

C. C. Tsai, R. J. Nemanich, M. J. Thompson, B. L. Stafford

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Metals films of Au, Al and Pd deposited on hydrogenated amorphous Si cause the formation of crystalline Si at temperatures well below its normal crystallization temperature of >650°C. The structural aspects are explored by SEM, TEM, scanning Auger microprobe (SAM), and interference enhanced Raman scattering (IERS). The structural changes are correlated with changes of the current voltage characteristics of the resulting Schottky barriers.

Original languageEnglish (US)
Pages (from-to)953-955
Number of pages3
JournalPhysica B+C
Volume117-118
Issue numberPART 2
DOIs
StatePublished - Mar 1983
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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