@article{1bea98b9a7714ad4908fcd25922714a6,
title = "Metal-induced crystallization of hydrogenated amorphous Si films",
abstract = "Metals films of Au, Al and Pd deposited on hydrogenated amorphous Si cause the formation of crystalline Si at temperatures well below its normal crystallization temperature of >650°C. The structural aspects are explored by SEM, TEM, scanning Auger microprobe (SAM), and interference enhanced Raman scattering (IERS). The structural changes are correlated with changes of the current voltage characteristics of the resulting Schottky barriers.",
author = "Tsai, {C. C.} and Nemanich, {R. J.} and Thompson, {M. J.} and Stafford, {B. L.}",
note = "Funding Information: The authors are indebted to Professor G. J. Lapeyre and M. Jaehnig for helpful discussions and support regarding the scanning Auger microprobe experiments, which were done at the NSF Regional Instrumentation facility at CRISS, located at the Montana State University. They also thank L. Fennell and B. Wacker for their assistance in the TEM work and sample preparation. This work was supported in part by the Solar Energy Research Institute under Contract No. XJ-0-9079-1.",
year = "1983",
month = mar,
doi = "10.1016/0378-4363(83)90705-2",
language = "English (US)",
volume = "117-118",
pages = "953--955",
journal = "Physica B+C",
issn = "0378-4363",
publisher = "North-Holland Publ Co",
number = "PART 2",
}