TY - JOUR
T1 - Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
AU - Sharstniou, Aliaksandr
AU - Niauzorau, Stanislau
AU - Junghare, Ashlesha
AU - Azeredo, Bruno P.
N1 - Funding Information:
Seitz Laboratory and, in memoriam, staff member Scott Maclaren; Arizona State University's LeRoy Eyring Center for Solid State Science; and the Science Foundation Arizona under the Bis grove Scholars Award.
Publisher Copyright:
© 2022 JoVE Journal of Visualized Experiments.
PY - 2022/2
Y1 - 2022/2
N2 - Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is capable of direct patterning 3D micro-and nanoscale features in monocrystalline group IV (e.g., Si) and III-V (e.g., GaAs) semiconductors without the need of sacrificial templates and lithographical steps. During this process, a reusable stamp coated with a noble metal catalyst is brought in contact with a Si wafer in the presence of a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture, which leads to the selective etching of Si at the metal-semiconductor contact interface. In this protocol, we discuss the stamp and substrate preparation methods applied in two Mac-Imprint configurations: (1) Porous Si Mac-Imprint with a solid catalyst; and (2) Solid Si Mac-Imprint with a porous catalyst. This process is high throughput and is capable of centimeter-scale parallel patterning with sub-20 nm resolution. It also provides low defect density and large area patterning in a single operation and bypasses the need for dry etching such as deep reactive ion etching (DRIE).
AB - Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is capable of direct patterning 3D micro-and nanoscale features in monocrystalline group IV (e.g., Si) and III-V (e.g., GaAs) semiconductors without the need of sacrificial templates and lithographical steps. During this process, a reusable stamp coated with a noble metal catalyst is brought in contact with a Si wafer in the presence of a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture, which leads to the selective etching of Si at the metal-semiconductor contact interface. In this protocol, we discuss the stamp and substrate preparation methods applied in two Mac-Imprint configurations: (1) Porous Si Mac-Imprint with a solid catalyst; and (2) Solid Si Mac-Imprint with a porous catalyst. This process is high throughput and is capable of centimeter-scale parallel patterning with sub-20 nm resolution. It also provides low defect density and large area patterning in a single operation and bypasses the need for dry etching such as deep reactive ion etching (DRIE).
UR - http://www.scopus.com/inward/record.url?scp=85125417339&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85125417339&partnerID=8YFLogxK
U2 - 10.3791/61040
DO - 10.3791/61040
M3 - Article
C2 - 35225282
AN - SCOPUS:85125417339
SN - 1940-087X
VL - 2022
JO - Journal of Visualized Experiments
JF - Journal of Visualized Experiments
IS - 180
M1 - e61040
ER -