As integration density continues to increase, and device feature sizes are further reduced, transport within the device is complicated by the fact that one or more critical dimensions becomes comparable to the inelastic mean free path. This latter dimension can be more than a micron at low temperature and is related not only to the quantum interference that can arise in device structures, but also to the critical energy and momentum relaxation processes, so that it also appears in concepts such as velocity overshoot. These effects are discussed in this review. The concepts of tunneling are also addressed.
|Original language||English (US)|
|Number of pages||39|
|Journal||Acta Polytechnica Scandinavica, Electrical Engineering|
|State||Published - Dec 1 1989|
ASJC Scopus subject areas
- Electrical and Electronic Engineering