Abstract
The surface crater defects in HgCdTe epilayers grown by molecular-beam epitaxy were discussed. It was found that these defects originated primarily within the HgCdTe films and were shown to be associated with the local development of polycrystalline morphology. The occurrence of finely spaced HgCdTe/Te intergrowths with either semicoherent or incoherent grain boundaries was also established.
Original language | English (US) |
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Pages (from-to) | 2275-2277 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 14 |
DOIs | |
State | Published - Apr 7 2003 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)