TY - GEN
T1 - Memory design for high temperature radiation environments
AU - Chen, Tai Hua
AU - Clark, Lawrence T.
AU - Holbert, Keith
PY - 2008/9/17
Y1 - 2008/9/17
N2 - This paper presents bulk CMOS memory circuits capable of both ultra-low voltage (subthreshold, i.e., VDD less than the transistor threshold voltage Vth) low power operation and high temperature operation at nominal VDD. One of the memory designs is radiation hardened by design (RHBD) using interleaved DICE storage cells, enclosed transistor geometries, and P-type guard rings. The other is not hardened against radiation. Experimental results are presented showing that the room temperature minimum VDD of the hardened device remains essentially unchanged from the pre-irradiation VDDMIN = 210 mV value after Co-60 irradiation to 4 Mrad(Si). The standby power supply current ISB of the device increases less than 2x from this level of irradiation. The RHBD memory design has been tested to be operational at temperatures of 225°C. The combined effects of high temperature and irradiation are also investigated for both designs.
AB - This paper presents bulk CMOS memory circuits capable of both ultra-low voltage (subthreshold, i.e., VDD less than the transistor threshold voltage Vth) low power operation and high temperature operation at nominal VDD. One of the memory designs is radiation hardened by design (RHBD) using interleaved DICE storage cells, enclosed transistor geometries, and P-type guard rings. The other is not hardened against radiation. Experimental results are presented showing that the room temperature minimum VDD of the hardened device remains essentially unchanged from the pre-irradiation VDDMIN = 210 mV value after Co-60 irradiation to 4 Mrad(Si). The standby power supply current ISB of the device increases less than 2x from this level of irradiation. The RHBD memory design has been tested to be operational at temperatures of 225°C. The combined effects of high temperature and irradiation are also investigated for both designs.
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U2 - 10.1109/RELPHY.2008.4558870
DO - 10.1109/RELPHY.2008.4558870
M3 - Conference contribution
AN - SCOPUS:51549101265
SN - 9781424420506
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 107
EP - 114
BT - 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
T2 - 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Y2 - 27 April 2008 through 1 May 2008
ER -