Memory design for high temperature radiation environments

Tai Hua Chen, Lawrence T. Clark, Keith Holbert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

This paper presents bulk CMOS memory circuits capable of both ultra-low voltage (subthreshold, i.e., VDD less than the transistor threshold voltage Vth) low power operation and high temperature operation at nominal VDD. One of the memory designs is radiation hardened by design (RHBD) using interleaved DICE storage cells, enclosed transistor geometries, and P-type guard rings. The other is not hardened against radiation. Experimental results are presented showing that the room temperature minimum VDD of the hardened device remains essentially unchanged from the pre-irradiation VDDMIN = 210 mV value after Co-60 irradiation to 4 Mrad(Si). The standby power supply current ISB of the device increases less than 2x from this level of irradiation. The RHBD memory design has been tested to be operational at temperatures of 225°C. The combined effects of high temperature and irradiation are also investigated for both designs.

Original languageEnglish (US)
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages107-114
Number of pages8
DOIs
StatePublished - Sep 17 2008
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: Apr 27 2008May 1 2008

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period4/27/085/1/08

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Chen, T. H., Clark, L. T., & Holbert, K. (2008). Memory design for high temperature radiation environments. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS (pp. 107-114). [4558870] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4558870