Memory design for high temperature radiation environments

Tai Hua Chen, Lawrence T. Clark, Keith Holbert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This paper presents bulk CMOS memory circuits capable of both ultra-low voltage (subthreshold, i.e., VDD less than the transistor threshold voltage Vth) low power operation and high temperature operation at nominal VDD. One of the memory designs is radiation hardened by design (RHBD) using interleaved DICE storage cells, enclosed transistor geometries, and P-type guard rings. The other is not hardened against radiation. Experimental results are presented showing that the room temperature minimum VDD of the hardened device remains essentially unchanged from the pre-irradiation VDDMIN = 210 mV value after Co-60 irradiation to 4 Mrad(Si). The standby power supply current ISB of the device increases less than 2x from this level of irradiation. The RHBD memory design has been tested to be operational at temperatures of 225°C. The combined effects of high temperature and irradiation are also investigated for both designs.

Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
Pages107-114
Number of pages8
DOIs
StatePublished - 2008
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: Apr 27 2008May 1 2008

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period4/27/085/1/08

Fingerprint

Radiation
Data storage equipment
Irradiation
Transistors
Temperature
High temperature operations
Threshold voltage
Geometry
Networks (circuits)
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chen, T. H., Clark, L. T., & Holbert, K. (2008). Memory design for high temperature radiation environments. In IEEE International Reliability Physics Symposium Proceedings (pp. 107-114). [4558870] https://doi.org/10.1109/RELPHY.2008.4558870

Memory design for high temperature radiation environments. / Chen, Tai Hua; Clark, Lawrence T.; Holbert, Keith.

IEEE International Reliability Physics Symposium Proceedings. 2008. p. 107-114 4558870.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, TH, Clark, LT & Holbert, K 2008, Memory design for high temperature radiation environments. in IEEE International Reliability Physics Symposium Proceedings., 4558870, pp. 107-114, 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS, Phoenix, AZ, United States, 4/27/08. https://doi.org/10.1109/RELPHY.2008.4558870
Chen TH, Clark LT, Holbert K. Memory design for high temperature radiation environments. In IEEE International Reliability Physics Symposium Proceedings. 2008. p. 107-114. 4558870 https://doi.org/10.1109/RELPHY.2008.4558870
Chen, Tai Hua ; Clark, Lawrence T. ; Holbert, Keith. / Memory design for high temperature radiation environments. IEEE International Reliability Physics Symposium Proceedings. 2008. pp. 107-114
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