Mechanisms of formation of buried-oxide in low-dose SIMOX

S. Bagchi, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The mechanism of the development of buried oxide (BOX) microstructure for annealed separation by implantation of oxygen (SIMOX) as a function of implantation dose is reported. The mechanism account for the dramatic change in the BOX microstructure that occurs near the `crossover' dose from disjointed oxide precipitates, to a continuous BOX with low Si island density, and then to a BOX with high density of Si islands.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages36-37
Number of pages2
StatePublished - 1997
EventProceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA
Duration: Oct 6 1997Oct 9 1997

Other

OtherProceedings of the 1997 IEEE International SOI Conference
CityFish Camp, CA, USA
Period10/6/9710/9/97

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bagchi, S., Krause, S., & Roitman, P. (1997). Mechanisms of formation of buried-oxide in low-dose SIMOX. In Anon (Ed.), IEEE International SOI Conference (pp. 36-37). IEEE.