Abstract
The mechanism of the development of buried oxide (BOX) microstructure for annealed separation by implantation of oxygen (SIMOX) as a function of implantation dose is reported. The mechanism account for the dramatic change in the BOX microstructure that occurs near the `crossover' dose from disjointed oxide precipitates, to a continuous BOX with low Si island density, and then to a BOX with high density of Si islands.
| Original language | English (US) |
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| Title of host publication | IEEE International SOI Conference |
| Editors | Anon |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 36-37 |
| Number of pages | 2 |
| State | Published - 1997 |
| Event | Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA Duration: Oct 6 1997 → Oct 9 1997 |
Other
| Other | Proceedings of the 1997 IEEE International SOI Conference |
|---|---|
| City | Fish Camp, CA, USA |
| Period | 10/6/97 → 10/9/97 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering