Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides

X. J. Chen, Hugh Barnaby, B. Vermeire, Keith Holbert, D. Wright, R. L. Pease, G. Dunham, D. G. Platteter, J. Seiler, S. McClure, P. Adell

Research output: Contribution to journalArticlepeer-review

69 Scopus citations

Abstract

Bipolar junction test structures packaged in hermetically sealed packages with excess molecular hydrogen (H 2) showed enhanced degradation after radiation exposure. Using chemical kinetics, we propose a model that quantitatively establishes the relationship between excess H 2 and radiation-induced interface trap formation. Using environments with different molecular hydrogen concentrations, radiation experiments were performed and the experimental data showed excellent agreement with the proposed model. The results, both experimentally and theoretically, showed increased radiation induced degradation with H 2 concentration, and device degradation saturate at both high and low ends of H 2 cocentrations.

Original languageEnglish (US)
Pages (from-to)1913-1919
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume54
Issue number6
DOIs
StatePublished - Dec 2007

Keywords

  • Bipolar oxide
  • Gated bipolar devices
  • Hydrogen
  • Interface traps
  • Radiation-induced

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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