Bipolar junction test structures packaged in hermetically sealed packages with excess molecular hydrogen (H 2) showed enhanced degradation after radiation exposure. Using chemical kinetics, we propose a model that quantitatively establishes the relationship between excess H 2 and radiation-induced interface trap formation. Using environments with different molecular hydrogen concentrations, radiation experiments were performed and the experimental data showed excellent agreement with the proposed model. The results, both experimentally and theoretically, showed increased radiation induced degradation with H 2 concentration, and device degradation saturate at both high and low ends of H 2 cocentrations.
- Bipolar oxide
- Gated bipolar devices
- Interface traps
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering