Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

Michinobu Tsuda, Kenichi Watanabe, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Rong Liu, Abigail Bell, Fernando Ponce

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Mechanism of hydrogen pre-annealing on the growth of gallium nitride (GaN) on sapphire using metallorganic vapor phase epitaxy was investigated. Several groups reported the influence of the injection at a high temperature before the deposition of a low-temperature buffer layer. It was observed that an atomic step was formed by high-temperature annealing in air.

Original languageEnglish (US)
Pages (from-to)585-589
Number of pages5
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
StatePublished - Jun 30 2003

Fingerprint

Gallium nitride
Metallorganic vapor phase epitaxy
Aluminum Oxide
gallium nitrides
Sapphire
sapphire
Annealing
annealing
vapor phase epitaxy
buffers
Buffer layers
injection
Temperature
Hydrogen
air
hydrogen
Air
gallium nitride

Keywords

  • Deoxidization
  • GaN
  • H-annealing
  • MOVPE
  • Sapphire substrate

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Tsuda, M., Watanabe, K., Kamiyama, S., Amano, H., Akasaki, I., Liu, R., ... Ponce, F. (2003). Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE. Applied Surface Science, 216(1-4 SPEC.), 585-589. https://doi.org/10.1016/S0169-4332(03)00449-5

Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE. / Tsuda, Michinobu; Watanabe, Kenichi; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Liu, Rong; Bell, Abigail; Ponce, Fernando.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 585-589.

Research output: Contribution to journalArticle

Tsuda, M, Watanabe, K, Kamiyama, S, Amano, H, Akasaki, I, Liu, R, Bell, A & Ponce, F 2003, 'Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE', Applied Surface Science, vol. 216, no. 1-4 SPEC., pp. 585-589. https://doi.org/10.1016/S0169-4332(03)00449-5
Tsuda M, Watanabe K, Kamiyama S, Amano H, Akasaki I, Liu R et al. Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE. Applied Surface Science. 2003 Jun 30;216(1-4 SPEC.):585-589. https://doi.org/10.1016/S0169-4332(03)00449-5
Tsuda, Michinobu ; Watanabe, Kenichi ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Liu, Rong ; Bell, Abigail ; Ponce, Fernando. / Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE. In: Applied Surface Science. 2003 ; Vol. 216, No. 1-4 SPEC. pp. 585-589.
@article{437c985ed34249b0b15817ce605f6867,
title = "Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE",
abstract = "Mechanism of hydrogen pre-annealing on the growth of gallium nitride (GaN) on sapphire using metallorganic vapor phase epitaxy was investigated. Several groups reported the influence of the injection at a high temperature before the deposition of a low-temperature buffer layer. It was observed that an atomic step was formed by high-temperature annealing in air.",
keywords = "Deoxidization, GaN, H-annealing, MOVPE, Sapphire substrate",
author = "Michinobu Tsuda and Kenichi Watanabe and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki and Rong Liu and Abigail Bell and Fernando Ponce",
year = "2003",
month = "6",
day = "30",
doi = "10.1016/S0169-4332(03)00449-5",
language = "English (US)",
volume = "216",
pages = "585--589",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4 SPEC.",

}

TY - JOUR

T1 - Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

AU - Tsuda, Michinobu

AU - Watanabe, Kenichi

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

AU - Liu, Rong

AU - Bell, Abigail

AU - Ponce, Fernando

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Mechanism of hydrogen pre-annealing on the growth of gallium nitride (GaN) on sapphire using metallorganic vapor phase epitaxy was investigated. Several groups reported the influence of the injection at a high temperature before the deposition of a low-temperature buffer layer. It was observed that an atomic step was formed by high-temperature annealing in air.

AB - Mechanism of hydrogen pre-annealing on the growth of gallium nitride (GaN) on sapphire using metallorganic vapor phase epitaxy was investigated. Several groups reported the influence of the injection at a high temperature before the deposition of a low-temperature buffer layer. It was observed that an atomic step was formed by high-temperature annealing in air.

KW - Deoxidization

KW - GaN

KW - H-annealing

KW - MOVPE

KW - Sapphire substrate

UR - http://www.scopus.com/inward/record.url?scp=0038684455&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038684455&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00449-5

DO - 10.1016/S0169-4332(03)00449-5

M3 - Article

VL - 216

SP - 585

EP - 589

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4 SPEC.

ER -