Abstract
Mechanism of hydrogen pre-annealing on the growth of gallium nitride (GaN) on sapphire using metallorganic vapor phase epitaxy was investigated. Several groups reported the influence of the injection at a high temperature before the deposition of a low-temperature buffer layer. It was observed that an atomic step was formed by high-temperature annealing in air.
Original language | English (US) |
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Pages (from-to) | 585-589 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 216 |
Issue number | 1-4 SPEC. |
DOIs | |
State | Published - Jun 30 2003 |
Keywords
- Deoxidization
- GaN
- H -annealing
- MOVPE
- Sapphire substrate
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films