Mechanism of H 2 pre-annealing on the growth of GaN on sapphire by MOVPE

Michinobu Tsuda, Kenichi Watanabe, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Rong Liu, Abigail Bell, Fernando Ponce

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Mechanism of hydrogen pre-annealing on the growth of gallium nitride (GaN) on sapphire using metallorganic vapor phase epitaxy was investigated. Several groups reported the influence of the injection at a high temperature before the deposition of a low-temperature buffer layer. It was observed that an atomic step was formed by high-temperature annealing in air.

Original languageEnglish (US)
Pages (from-to)585-589
Number of pages5
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
StatePublished - Jun 30 2003

Keywords

  • Deoxidization
  • GaN
  • H -annealing
  • MOVPE
  • Sapphire substrate

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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    Tsuda, M., Watanabe, K., Kamiyama, S., Amano, H., Akasaki, I., Liu, R., Bell, A., & Ponce, F. (2003). Mechanism of H 2 pre-annealing on the growth of GaN on sapphire by MOVPE Applied Surface Science, 216(1-4 SPEC.), 585-589. https://doi.org/10.1016/S0169-4332(03)00449-5