Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material

S. Bagchi; J. D. Lee; Stephen Krause; P. Roitman

doi:10.1007/BF02666167

Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material

S. Bagchi, J. D. Lee, Stephen Krause, P. Roitman

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The defects and microstructure of low-dose (<0.7 x 10¹⁸ cm^-2), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3 x 10¹⁸ cm^-2), annealed SIMOX originate from unfaulting of long (∼ 10 μm), shallow (0.3 μm), extrinsic stacking faults generated during the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried oxide with a reduced density of Si islands in the buried oxide.

Original language	English (US)
Pages (from-to)	7-12
Number of pages	6
Journal	Journal of Electronic Materials
Volume	25
Issue number	1
DOIs	https://doi.org/10.1007/BF02666167
State	Published - Jan 1996

Keywords

Dislocation half-loop
Multiply-faulted defect
SIMOX
Silicon islands
Stacking fault pyramid
Threading dislocation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02666167

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title = "Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material",

abstract = "The defects and microstructure of low-dose (<0.7 x 1018 cm-2), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3 x 1018 cm-2), annealed SIMOX originate from unfaulting of long (∼ 10 μm), shallow (0.3 μm), extrinsic stacking faults generated during the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried oxide with a reduced density of Si islands in the buried oxide.",

keywords = "Dislocation half-loop, Multiply-faulted defect, SIMOX, Silicon islands, Stacking fault pyramid, Threading dislocation",

author = "S. Bagchi and Lee, {J. D.} and Stephen Krause and P. Roitman",

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AU - Bagchi, S.

AU - Lee, J. D.

AU - Krause, Stephen

AU - Roitman, P.

PY - 1996/1

Y1 - 1996/1

N2 - The defects and microstructure of low-dose (<0.7 x 1018 cm-2), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3 x 1018 cm-2), annealed SIMOX originate from unfaulting of long (∼ 10 μm), shallow (0.3 μm), extrinsic stacking faults generated during the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried oxide with a reduced density of Si islands in the buried oxide.

AB - The defects and microstructure of low-dose (<0.7 x 1018 cm-2), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3 x 1018 cm-2), annealed SIMOX originate from unfaulting of long (∼ 10 μm), shallow (0.3 μm), extrinsic stacking faults generated during the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried oxide with a reduced density of Si islands in the buried oxide.

KW - Dislocation half-loop

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KW - Silicon islands

KW - Stacking fault pyramid

KW - Threading dislocation

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Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material

Abstract

Keywords

ASJC Scopus subject areas

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