Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material

S. Bagchi, J. D. Lee, Stephen Krause, P. Roitman

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The defects and microstructure of low-dose (<0.7 x 1018 cm-2), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3 x 1018 cm-2), annealed SIMOX originate from unfaulting of long (∼ 10 μm), shallow (0.3 μm), extrinsic stacking faults generated during the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried oxide with a reduced density of Si islands in the buried oxide.

Original languageEnglish (US)
Pages (from-to)7-12
Number of pages6
JournalJournal of Electronic Materials
Volume25
Issue number1
StatePublished - Jan 1996

Fingerprint

Silicon
Oxides
Defect density
insulators
Oxygen
dosage
Defects
defects
silicon
oxygen
Annealing
Stacking faults
oxides
annealing
Transmission electron microscopy
Microstructure
crystal defects
transmission electron microscopy
microstructure
Temperature

Keywords

  • Dislocation half-loop
  • Multiply-faulted defect
  • Silicon islands
  • SIMOX
  • Stacking fault pyramid
  • Threading dislocation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material. / Bagchi, S.; Lee, J. D.; Krause, Stephen; Roitman, P.

In: Journal of Electronic Materials, Vol. 25, No. 1, 01.1996, p. 7-12.

Research output: Contribution to journalArticle

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