This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.