Abstract

This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages21-26
Number of pages6
Volume1443
DOIs
StatePublished - 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

Fingerprint

Zinc Oxide
Indium
Thin film transistors
Zinc oxide
zinc oxides
indium oxides
Oxide films
transistors
thin films
Mountings
Compressive stress
thresholds
Tensile stress
mounting
tensile stress
radii

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Alford, T., Indluru, A., & Vemuri, R. N. P. (2012). Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs. In Materials Research Society Symposium Proceedings (Vol. 1443, pp. 21-26) https://doi.org/10.1557/opl.2012.1439

Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs. / Alford, Terry; Indluru, Anil; Vemuri, Rajitha N P.

Materials Research Society Symposium Proceedings. Vol. 1443 2012. p. 21-26.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alford, T, Indluru, A & Vemuri, RNP 2012, Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs. in Materials Research Society Symposium Proceedings. vol. 1443, pp. 21-26, 2012 MRS Spring Meeting, San Francisco, CA, United States, 4/9/12. https://doi.org/10.1557/opl.2012.1439
Alford T, Indluru A, Vemuri RNP. Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs. In Materials Research Society Symposium Proceedings. Vol. 1443. 2012. p. 21-26 https://doi.org/10.1557/opl.2012.1439
Alford, Terry ; Indluru, Anil ; Vemuri, Rajitha N P. / Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs. Materials Research Society Symposium Proceedings. Vol. 1443 2012. pp. 21-26
@inproceedings{2cbdeff0448c4cc1b9e553a205381e57,
title = "Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs",
abstract = "This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.",
author = "Terry Alford and Anil Indluru and Vemuri, {Rajitha N P}",
year = "2012",
doi = "10.1557/opl.2012.1439",
language = "English (US)",
isbn = "9781627482462",
volume = "1443",
pages = "21--26",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs

AU - Alford, Terry

AU - Indluru, Anil

AU - Vemuri, Rajitha N P

PY - 2012

Y1 - 2012

N2 - This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.

AB - This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.

UR - http://www.scopus.com/inward/record.url?scp=84879250075&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879250075&partnerID=8YFLogxK

U2 - 10.1557/opl.2012.1439

DO - 10.1557/opl.2012.1439

M3 - Conference contribution

SN - 9781627482462

VL - 1443

SP - 21

EP - 26

BT - Materials Research Society Symposium Proceedings

ER -