TY - GEN
T1 - Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs
AU - Alford, Terry
AU - Indluru, Anil
AU - Vemuri, Rajitha N P
N1 - Funding Information:
This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0902277) to whom the authors are greatly indebted.
PY - 2012
Y1 - 2012
N2 - This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.
AB - This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.
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U2 - 10.1557/opl.2012.1439
DO - 10.1557/opl.2012.1439
M3 - Conference contribution
AN - SCOPUS:84879250075
SN - 9781627482462
T3 - Materials Research Society Symposium Proceedings
SP - 21
EP - 26
BT - Bandgap Engineering and Interfaces of Metal Oxides for Energy
T2 - 2012 MRS Spring Meeting
Y2 - 9 April 2012 through 13 April 2012
ER -