Abstract

This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.

Original languageEnglish (US)
Title of host publicationBandgap Engineering and Interfaces of Metal Oxides for Energy
Pages21-26
Number of pages6
DOIs
StatePublished - Dec 1 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1443
ISSN (Print)0272-9172

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Alford, T., Indluru, A., & Vemuri, R. N. P. (2012). Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs. In Bandgap Engineering and Interfaces of Metal Oxides for Energy (pp. 21-26). (Materials Research Society Symposium Proceedings; Vol. 1443). https://doi.org/10.1557/opl.2012.1439