Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

J. M. Barker; D. K. Ferry; Stephen Goodnick; D. D. Koleske; A. E. Wickenden; R. L. Henry

doi:10.1016/S0167-9317(02)00627-5

Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

J. M. Barker, D. K. Ferry, Stephen Goodnick, D. D. Koleske, A. E. Wickenden, R. L. Henry

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm²/V s and an estimated electron velocity of ∼2 × 10⁷ cm/s was attained at a field of 180 kV/cm.

Original language	English (US)
Pages (from-to)	193-197
Number of pages	5
Journal	Microelectronic Engineering
Volume	63
Issue number	1-3
DOIs	https://doi.org/10.1016/S0167-9317(02)00627-5
State	Published - Aug 2002

Keywords

AlGaN/GaN
Drift velocity
GaN
High field transport
Velocity-field characteristic

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(02)00627-5

Cite this

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title = "Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures",

abstract = "AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼2 × 107 cm/s was attained at a field of 180 kV/cm.",

keywords = "AlGaN/GaN, Drift velocity, GaN, High field transport, Velocity-field characteristic",

author = "Barker, {J. M.} and Ferry, {D. K.} and Stephen Goodnick and Koleske, {D. D.} and Wickenden, {A. E.} and Henry, {R. L.}",

note = "Funding Information: This work is supported by the Office of Naval Research. We thank Sandia National Laboratories for their assistance in device processing.",

year = "2002",

month = aug,

doi = "10.1016/S0167-9317(02)00627-5",

language = "English (US)",

volume = "63",

pages = "193--197",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-3",

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TY - JOUR

T1 - Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

AU - Barker, J. M.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Koleske, D. D.

AU - Wickenden, A. E.

AU - Henry, R. L.

N1 - Funding Information: This work is supported by the Office of Naval Research. We thank Sandia National Laboratories for their assistance in device processing.

PY - 2002/8

Y1 - 2002/8

N2 - AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼2 × 107 cm/s was attained at a field of 180 kV/cm.

AB - AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼2 × 107 cm/s was attained at a field of 180 kV/cm.

KW - AlGaN/GaN

KW - Drift velocity

KW - GaN

KW - High field transport

KW - Velocity-field characteristic

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U2 - 10.1016/S0167-9317(02)00627-5

DO - 10.1016/S0167-9317(02)00627-5

M3 - Article

AN - SCOPUS:0036679901

SN - 0167-9317

VL - 63

SP - 193

EP - 197

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-3

ER -

Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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