Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

J. M. Barker, D. K. Ferry, Stephen Goodnick, D. D. Koleske, A. E. Wickenden, R. L. Henry

Research output: Contribution to journalArticle

13 Scopus citations


AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼2 × 107 cm/s was attained at a field of 180 kV/cm.

Original languageEnglish (US)
Pages (from-to)193-197
Number of pages5
JournalMicroelectronic Engineering
Issue number1-3
StatePublished - Aug 1 2002


  • AlGaN/GaN
  • Drift velocity
  • GaN
  • High field transport
  • Velocity-field characteristic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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