Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

J. M. Barker, D. K. Ferry, Stephen Goodnick, D. D. Koleske, A. E. Wickenden, R. L. Henry

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼2 × 107 cm/s was attained at a field of 180 kV/cm.

Original languageEnglish (US)
Pages (from-to)193-197
Number of pages5
JournalMicroelectronic Engineering
Volume63
Issue number1-3
DOIs
StatePublished - Aug 2002

Fingerprint

Heterojunctions
constrictions
pulse duration
velocity distribution
electric potential
room temperature
electrons
Electrons
Electric potential
Temperature
aluminum gallium nitride

Keywords

  • AlGaN/GaN
  • Drift velocity
  • GaN
  • High field transport
  • Velocity-field characteristic

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures. / Barker, J. M.; Ferry, D. K.; Goodnick, Stephen; Koleske, D. D.; Wickenden, A. E.; Henry, R. L.

In: Microelectronic Engineering, Vol. 63, No. 1-3, 08.2002, p. 193-197.

Research output: Contribution to journalArticle

Barker, J. M. ; Ferry, D. K. ; Goodnick, Stephen ; Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. / Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures. In: Microelectronic Engineering. 2002 ; Vol. 63, No. 1-3. pp. 193-197.
@article{8b8a25a4e92e4ab69b653e0f1ef70ec5,
title = "Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures",
abstract = "AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼2 × 107 cm/s was attained at a field of 180 kV/cm.",
keywords = "AlGaN/GaN, Drift velocity, GaN, High field transport, Velocity-field characteristic",
author = "Barker, {J. M.} and Ferry, {D. K.} and Stephen Goodnick and Koleske, {D. D.} and Wickenden, {A. E.} and Henry, {R. L.}",
year = "2002",
month = "8",
doi = "10.1016/S0167-9317(02)00627-5",
language = "English (US)",
volume = "63",
pages = "193--197",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

AU - Barker, J. M.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Koleske, D. D.

AU - Wickenden, A. E.

AU - Henry, R. L.

PY - 2002/8

Y1 - 2002/8

N2 - AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼2 × 107 cm/s was attained at a field of 180 kV/cm.

AB - AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼2 × 107 cm/s was attained at a field of 180 kV/cm.

KW - AlGaN/GaN

KW - Drift velocity

KW - GaN

KW - High field transport

KW - Velocity-field characteristic

UR - http://www.scopus.com/inward/record.url?scp=0036679901&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036679901&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(02)00627-5

DO - 10.1016/S0167-9317(02)00627-5

M3 - Article

AN - SCOPUS:0036679901

VL - 63

SP - 193

EP - 197

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-3

ER -