Measurements of the band offset of SiO 2 on clean GaN

E. H. Hurt, Ted E. Cook, K. M. Tracy, R. F. Davis, G. Lucovsky, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The band alignment of SiO 2 and GaN is important for passivation of high voltage devices and for gate insulator applications. In this study XPS and UPS techniques are employed to determine the electronic states as SiO 2 is deposited onto a clean GaN surface. The substrate was epitaxially grown n-type GaN on 6H-SiC (0001) substrates with an AlN (0001) buffer layer. The GaN surface was atomically cleaned via a 860°C anneal in an NH 3 atmosphere. For the clean GaN surface, upward band bending of ∼0.3 ± 0.1 eV was measured, and the electron affinity was measured to be ∼2.9 eV. Layers of Si were deposited on the GaN surface via Molecular Beam Epitaxy (MBE), and the Si was oxidized by a remote O 2 plasma. The oxidation of the Si occurred without oxidizing the GaN. Densification of the created SiO 2 film was achieved by annealing the substrate at 650°C. Surface analysis techniques were performed after each process, and yielded a valence band offset of ∼2.0 eV, and a conduction band offset of ∼3.6 eV for the GaN-SiO 2 interface.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Pages577-582
Number of pages6
Volume693
StatePublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: Nov 26 2001Nov 30 2001

Other

OtherGaN and Related Alloys-2001
CountryUnited States
CityBoston, MA
Period11/26/0111/30/01

Fingerprint

Substrates
Electron affinity
Surface analysis
Electronic states
Buffer layers
Valence bands
Conduction bands
Densification
Passivation
Molecular beam epitaxy
X ray photoelectron spectroscopy
Annealing
Plasmas
Oxidation
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hurt, E. H., Cook, T. E., Tracy, K. M., Davis, R. F., Lucovsky, G., & Nemanich, R. (2002). Measurements of the band offset of SiO 2 on clean GaN In J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, & H. Riechert (Eds.), Materials Research Society Symposium - Proceedings (Vol. 693, pp. 577-582)

Measurements of the band offset of SiO 2 on clean GaN . / Hurt, E. H.; Cook, Ted E.; Tracy, K. M.; Davis, R. F.; Lucovsky, G.; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. ed. / J.E. Northrup; J. Neugebauer; D.C. Look; S.F. Chichibu; H. Riechert. Vol. 693 2002. p. 577-582.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hurt, EH, Cook, TE, Tracy, KM, Davis, RF, Lucovsky, G & Nemanich, R 2002, Measurements of the band offset of SiO 2 on clean GaN in JE Northrup, J Neugebauer, DC Look, SF Chichibu & H Riechert (eds), Materials Research Society Symposium - Proceedings. vol. 693, pp. 577-582, GaN and Related Alloys-2001, Boston, MA, United States, 11/26/01.
Hurt EH, Cook TE, Tracy KM, Davis RF, Lucovsky G, Nemanich R. Measurements of the band offset of SiO 2 on clean GaN In Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H, editors, Materials Research Society Symposium - Proceedings. Vol. 693. 2002. p. 577-582
Hurt, E. H. ; Cook, Ted E. ; Tracy, K. M. ; Davis, R. F. ; Lucovsky, G. ; Nemanich, Robert. / Measurements of the band offset of SiO 2 on clean GaN Materials Research Society Symposium - Proceedings. editor / J.E. Northrup ; J. Neugebauer ; D.C. Look ; S.F. Chichibu ; H. Riechert. Vol. 693 2002. pp. 577-582
@inproceedings{8082babc36734edc89c510c524cec325,
title = "Measurements of the band offset of SiO 2 on clean GaN",
abstract = "The band alignment of SiO 2 and GaN is important for passivation of high voltage devices and for gate insulator applications. In this study XPS and UPS techniques are employed to determine the electronic states as SiO 2 is deposited onto a clean GaN surface. The substrate was epitaxially grown n-type GaN on 6H-SiC (0001) substrates with an AlN (0001) buffer layer. The GaN surface was atomically cleaned via a 860°C anneal in an NH 3 atmosphere. For the clean GaN surface, upward band bending of ∼0.3 ± 0.1 eV was measured, and the electron affinity was measured to be ∼2.9 eV. Layers of Si were deposited on the GaN surface via Molecular Beam Epitaxy (MBE), and the Si was oxidized by a remote O 2 plasma. The oxidation of the Si occurred without oxidizing the GaN. Densification of the created SiO 2 film was achieved by annealing the substrate at 650°C. Surface analysis techniques were performed after each process, and yielded a valence band offset of ∼2.0 eV, and a conduction band offset of ∼3.6 eV for the GaN-SiO 2 interface.",
author = "Hurt, {E. H.} and Cook, {Ted E.} and Tracy, {K. M.} and Davis, {R. F.} and G. Lucovsky and Robert Nemanich",
year = "2002",
language = "English (US)",
volume = "693",
pages = "577--582",
editor = "J.E. Northrup and J. Neugebauer and D.C. Look and S.F. Chichibu and H. Riechert",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Measurements of the band offset of SiO 2 on clean GaN

AU - Hurt, E. H.

AU - Cook, Ted E.

AU - Tracy, K. M.

AU - Davis, R. F.

AU - Lucovsky, G.

AU - Nemanich, Robert

PY - 2002

Y1 - 2002

N2 - The band alignment of SiO 2 and GaN is important for passivation of high voltage devices and for gate insulator applications. In this study XPS and UPS techniques are employed to determine the electronic states as SiO 2 is deposited onto a clean GaN surface. The substrate was epitaxially grown n-type GaN on 6H-SiC (0001) substrates with an AlN (0001) buffer layer. The GaN surface was atomically cleaned via a 860°C anneal in an NH 3 atmosphere. For the clean GaN surface, upward band bending of ∼0.3 ± 0.1 eV was measured, and the electron affinity was measured to be ∼2.9 eV. Layers of Si were deposited on the GaN surface via Molecular Beam Epitaxy (MBE), and the Si was oxidized by a remote O 2 plasma. The oxidation of the Si occurred without oxidizing the GaN. Densification of the created SiO 2 film was achieved by annealing the substrate at 650°C. Surface analysis techniques were performed after each process, and yielded a valence band offset of ∼2.0 eV, and a conduction band offset of ∼3.6 eV for the GaN-SiO 2 interface.

AB - The band alignment of SiO 2 and GaN is important for passivation of high voltage devices and for gate insulator applications. In this study XPS and UPS techniques are employed to determine the electronic states as SiO 2 is deposited onto a clean GaN surface. The substrate was epitaxially grown n-type GaN on 6H-SiC (0001) substrates with an AlN (0001) buffer layer. The GaN surface was atomically cleaned via a 860°C anneal in an NH 3 atmosphere. For the clean GaN surface, upward band bending of ∼0.3 ± 0.1 eV was measured, and the electron affinity was measured to be ∼2.9 eV. Layers of Si were deposited on the GaN surface via Molecular Beam Epitaxy (MBE), and the Si was oxidized by a remote O 2 plasma. The oxidation of the Si occurred without oxidizing the GaN. Densification of the created SiO 2 film was achieved by annealing the substrate at 650°C. Surface analysis techniques were performed after each process, and yielded a valence band offset of ∼2.0 eV, and a conduction band offset of ∼3.6 eV for the GaN-SiO 2 interface.

UR - http://www.scopus.com/inward/record.url?scp=0036375774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036375774&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036375774

VL - 693

SP - 577

EP - 582

BT - Materials Research Society Symposium - Proceedings

A2 - Northrup, J.E.

A2 - Neugebauer, J.

A2 - Look, D.C.

A2 - Chichibu, S.F.

A2 - Riechert, H.

ER -