Abstract
Ammonia and nitrogen solubilities in gallium melt have been measured under atmospheric pressure in the 303-673 K temperature range. The saturation solubilities of NH3 and N2 in Ga are of the order of 10-4 mole fraction and they decrease with temperature under standard conditions. Ga-NH3 solutions enable the direct synthesis of GaN crystallites with high luminescence efficiency, as well as the growth of n- and p-type doped crystals.
Original language | English (US) |
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Pages (from-to) | 611-613 |
Number of pages | 3 |
Journal | Journal of Alloys and Compounds |
Volume | 467 |
Issue number | 1-2 |
DOIs | |
State | Published - Jan 7 2009 |
Keywords
- Diffusion
- Gas-solid reactions
- Metals and alloys
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry