Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

D. Cherns; J. Barnard; F. A. Ponce

doi:10.1016/S0038-1098(99)00130-1

Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

D. Cherns, J. Barnard, F. A. Ponce

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Electron holography at 200 kV in a field emission transmission electron microscope has been used to profile the piezoelectric field across a GaN/1.5 nm In_0.52Ga_0.48N/GaN single quantum well structure. By using cross-sectional samples under conditions where surface relaxation effects were negligible, a local decrease in potential of 0.6±0.2 V was measured across the InGaN layer in the [0001] direction, implying a local piezoelectric field E_[0001̄] of 4 MV cm^-1, in agreement with bulk estimates. The potential of the technique for profiling non-uniform fields and other GaN based layers is assessed.

Original language	English (US)
Pages (from-to)	281-285
Number of pages	5
Journal	Solid State Communications
Volume	111
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(99)00130-1
State	Published - Jul 2 1999
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(99)00130-1

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@article{d688a6fe543e42b1b0e117924bcc066d,

title = "Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography",

abstract = "Electron holography at 200 kV in a field emission transmission electron microscope has been used to profile the piezoelectric field across a GaN/1.5 nm In0.52Ga0.48N/GaN single quantum well structure. By using cross-sectional samples under conditions where surface relaxation effects were negligible, a local decrease in potential of 0.6±0.2 V was measured across the InGaN layer in the [0001] direction, implying a local piezoelectric field E[000{\=1}] of 4 MV cm-1, in agreement with bulk estimates. The potential of the technique for profiling non-uniform fields and other GaN based layers is assessed.",

author = "D. Cherns and J. Barnard and Ponce, {F. A.}",

note = "Funding Information: We are grateful to NATO for provision of a grant no. CRG960690. JB is grateful to the EPSRC and Motorola, AZ, USA for financial support. ",

year = "1999",

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doi = "10.1016/S0038-1098(99)00130-1",

language = "English (US)",

volume = "111",

pages = "281--285",

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TY - JOUR

T1 - Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

AU - Cherns, D.

AU - Barnard, J.

AU - Ponce, F. A.

N1 - Funding Information: We are grateful to NATO for provision of a grant no. CRG960690. JB is grateful to the EPSRC and Motorola, AZ, USA for financial support.

PY - 1999/7/2

Y1 - 1999/7/2

N2 - Electron holography at 200 kV in a field emission transmission electron microscope has been used to profile the piezoelectric field across a GaN/1.5 nm In0.52Ga0.48N/GaN single quantum well structure. By using cross-sectional samples under conditions where surface relaxation effects were negligible, a local decrease in potential of 0.6±0.2 V was measured across the InGaN layer in the [0001] direction, implying a local piezoelectric field E[0001̄] of 4 MV cm-1, in agreement with bulk estimates. The potential of the technique for profiling non-uniform fields and other GaN based layers is assessed.

AB - Electron holography at 200 kV in a field emission transmission electron microscope has been used to profile the piezoelectric field across a GaN/1.5 nm In0.52Ga0.48N/GaN single quantum well structure. By using cross-sectional samples under conditions where surface relaxation effects were negligible, a local decrease in potential of 0.6±0.2 V was measured across the InGaN layer in the [0001] direction, implying a local piezoelectric field E[0001̄] of 4 MV cm-1, in agreement with bulk estimates. The potential of the technique for profiling non-uniform fields and other GaN based layers is assessed.

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DO - 10.1016/S0038-1098(99)00130-1

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EP - 285

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

Abstract

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