Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

D. Cherns, J. Barnard, F. A. Ponce

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

Electron holography at 200 kV in a field emission transmission electron microscope has been used to profile the piezoelectric field across a GaN/1.5 nm In0.52Ga0.48N/GaN single quantum well structure. By using cross-sectional samples under conditions where surface relaxation effects were negligible, a local decrease in potential of 0.6±0.2 V was measured across the InGaN layer in the [0001] direction, implying a local piezoelectric field E[0001̄] of 4 MV cm-1, in agreement with bulk estimates. The potential of the technique for profiling non-uniform fields and other GaN based layers is assessed.

Original languageEnglish (US)
Pages (from-to)281-285
Number of pages5
JournalSolid State Communications
Volume111
Issue number5
DOIs
StatePublished - Jul 2 1999
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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