Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellipsometry

J. Moers, D. M. Buca, M. Goryll, R. Loo, M. Caymax, S. Mantl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The further development of MOSFET devices is mandatory for the development of information technology. Besides the optimization of lateral layouts and introduction of alternative device architectures, new materials were introduced, too. To increase the on current Ion the carrier mobility is increased by straining the silicon channel layer. To get strained silicon layers on insulator (SSOI) the so called Jülich-Process was developed, which uses an ion implantation assisted relaxation of thin Si1-xGex layer to get a high-quality surface to grow pseudomorphically strained silicon. To characterize the Si1-xGex, layers non-destructively by spectroscopic ellipsometry (SE), in this work a parametric expression of the dielectric function was established, which depends only on the Ge fraction x. With that function, SE can be used as powerful tool to characterize thickness and composition homogeneity of the epitaxial Si1-xGex, layers.

Original languageEnglish (US)
Title of host publicationConference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
Pages139-142
Number of pages4
DOIs
StatePublished - Dec 1 2006
Externally publishedYes
Event6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06 - Smolenice Castle, Slovakia
Duration: Oct 16 2006Oct 18 2006

Publication series

NameConference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06

Other

Other6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
CountrySlovakia
CitySmolenice Castle
Period10/16/0610/18/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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  • Cite this

    Moers, J., Buca, D. M., Goryll, M., Loo, R., Caymax, M., & Mantl, S. (2006). Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellipsometry. In Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06 (pp. 139-142). [4133097] (Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06). https://doi.org/10.1109/ASDAM.2006.331173