TY - GEN
T1 - Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellipsometry
AU - Moers, J.
AU - Buca, D. M.
AU - Goryll, M.
AU - Loo, R.
AU - Caymax, M.
AU - Mantl, S.
PY - 2006
Y1 - 2006
N2 - The further development of MOSFET devices is mandatory for the development of information technology. Besides the optimization of lateral layouts and introduction of alternative device architectures, new materials were introduced, too. To increase the on current Ion the carrier mobility is increased by straining the silicon channel layer. To get strained silicon layers on insulator (SSOI) the so called Jülich-Process was developed, which uses an ion implantation assisted relaxation of thin Si1-xGex layer to get a high-quality surface to grow pseudomorphically strained silicon. To characterize the Si1-xGex, layers non-destructively by spectroscopic ellipsometry (SE), in this work a parametric expression of the dielectric function was established, which depends only on the Ge fraction x. With that function, SE can be used as powerful tool to characterize thickness and composition homogeneity of the epitaxial Si1-xGex, layers.
AB - The further development of MOSFET devices is mandatory for the development of information technology. Besides the optimization of lateral layouts and introduction of alternative device architectures, new materials were introduced, too. To increase the on current Ion the carrier mobility is increased by straining the silicon channel layer. To get strained silicon layers on insulator (SSOI) the so called Jülich-Process was developed, which uses an ion implantation assisted relaxation of thin Si1-xGex layer to get a high-quality surface to grow pseudomorphically strained silicon. To characterize the Si1-xGex, layers non-destructively by spectroscopic ellipsometry (SE), in this work a parametric expression of the dielectric function was established, which depends only on the Ge fraction x. With that function, SE can be used as powerful tool to characterize thickness and composition homogeneity of the epitaxial Si1-xGex, layers.
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U2 - 10.1109/ASDAM.2006.331173
DO - 10.1109/ASDAM.2006.331173
M3 - Conference contribution
AN - SCOPUS:46749158413
SN - 1424403960
SN - 9781424403967
T3 - Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
SP - 139
EP - 142
BT - Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
T2 - 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
Y2 - 16 October 2006 through 18 October 2006
ER -