Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy

B. J. Rodriguez, D. J. Kim, A. I. Kingon, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Piezoelectric properties of wurtzite AlN and GaN/AlN are investigated using scanning force microscopy (SFM). The magnitude of the effective longitudinal piezoelectric constant d 33 of AlN and GaN/AlN thin films are measured and reported, and the d 33 coefficients of these films were verified using an interferometric technique. Simultaneous imaging of the topography, and of the phase and magnitude of the piezoelectric strain is performed. Using a GaN film with patterned polarities, we demonstrate that polarity can be inferred from the phase image of the piezoelectric strain. We report d 33=3±1 pm/V for AlN/SiC and 2±1 pm/V for GaN/AlN/SiC. Films grown by organo-metallic vapor phase epitaxy (OMVPE) on SiC, sputtered AlN films and films grown by molecular beam epitaxy (MBE) are characterized and compared.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Pages571-576
Number of pages6
Volume693
StatePublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: Nov 26 2001Nov 30 2001

Other

OtherGaN and Related Alloys-2001
CountryUnited States
CityBoston, MA
Period11/26/0111/30/01

Fingerprint

Nitrides
Heterojunctions
Atomic force microscopy
Thin films
Vapor phase epitaxy
Molecular beam epitaxy
Topography
Imaging techniques

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Rodriguez, B. J., Kim, D. J., Kingon, A. I., & Nemanich, R. (2002). Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy. In J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, & H. Riechert (Eds.), Materials Research Society Symposium - Proceedings (Vol. 693, pp. 571-576)

Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy. / Rodriguez, B. J.; Kim, D. J.; Kingon, A. I.; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. ed. / J.E. Northrup; J. Neugebauer; D.C. Look; S.F. Chichibu; H. Riechert. Vol. 693 2002. p. 571-576.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rodriguez, BJ, Kim, DJ, Kingon, AI & Nemanich, R 2002, Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy. in JE Northrup, J Neugebauer, DC Look, SF Chichibu & H Riechert (eds), Materials Research Society Symposium - Proceedings. vol. 693, pp. 571-576, GaN and Related Alloys-2001, Boston, MA, United States, 11/26/01.
Rodriguez BJ, Kim DJ, Kingon AI, Nemanich R. Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy. In Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H, editors, Materials Research Society Symposium - Proceedings. Vol. 693. 2002. p. 571-576
Rodriguez, B. J. ; Kim, D. J. ; Kingon, A. I. ; Nemanich, Robert. / Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy. Materials Research Society Symposium - Proceedings. editor / J.E. Northrup ; J. Neugebauer ; D.C. Look ; S.F. Chichibu ; H. Riechert. Vol. 693 2002. pp. 571-576
@inproceedings{291622ab0b954dcfb78de3e3c14b54c3,
title = "Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy",
abstract = "Piezoelectric properties of wurtzite AlN and GaN/AlN are investigated using scanning force microscopy (SFM). The magnitude of the effective longitudinal piezoelectric constant d 33 of AlN and GaN/AlN thin films are measured and reported, and the d 33 coefficients of these films were verified using an interferometric technique. Simultaneous imaging of the topography, and of the phase and magnitude of the piezoelectric strain is performed. Using a GaN film with patterned polarities, we demonstrate that polarity can be inferred from the phase image of the piezoelectric strain. We report d 33=3±1 pm/V for AlN/SiC and 2±1 pm/V for GaN/AlN/SiC. Films grown by organo-metallic vapor phase epitaxy (OMVPE) on SiC, sputtered AlN films and films grown by molecular beam epitaxy (MBE) are characterized and compared.",
author = "Rodriguez, {B. J.} and Kim, {D. J.} and Kingon, {A. I.} and Robert Nemanich",
year = "2002",
language = "English (US)",
volume = "693",
pages = "571--576",
editor = "J.E. Northrup and J. Neugebauer and D.C. Look and S.F. Chichibu and H. Riechert",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy

AU - Rodriguez, B. J.

AU - Kim, D. J.

AU - Kingon, A. I.

AU - Nemanich, Robert

PY - 2002

Y1 - 2002

N2 - Piezoelectric properties of wurtzite AlN and GaN/AlN are investigated using scanning force microscopy (SFM). The magnitude of the effective longitudinal piezoelectric constant d 33 of AlN and GaN/AlN thin films are measured and reported, and the d 33 coefficients of these films were verified using an interferometric technique. Simultaneous imaging of the topography, and of the phase and magnitude of the piezoelectric strain is performed. Using a GaN film with patterned polarities, we demonstrate that polarity can be inferred from the phase image of the piezoelectric strain. We report d 33=3±1 pm/V for AlN/SiC and 2±1 pm/V for GaN/AlN/SiC. Films grown by organo-metallic vapor phase epitaxy (OMVPE) on SiC, sputtered AlN films and films grown by molecular beam epitaxy (MBE) are characterized and compared.

AB - Piezoelectric properties of wurtzite AlN and GaN/AlN are investigated using scanning force microscopy (SFM). The magnitude of the effective longitudinal piezoelectric constant d 33 of AlN and GaN/AlN thin films are measured and reported, and the d 33 coefficients of these films were verified using an interferometric technique. Simultaneous imaging of the topography, and of the phase and magnitude of the piezoelectric strain is performed. Using a GaN film with patterned polarities, we demonstrate that polarity can be inferred from the phase image of the piezoelectric strain. We report d 33=3±1 pm/V for AlN/SiC and 2±1 pm/V for GaN/AlN/SiC. Films grown by organo-metallic vapor phase epitaxy (OMVPE) on SiC, sputtered AlN films and films grown by molecular beam epitaxy (MBE) are characterized and compared.

UR - http://www.scopus.com/inward/record.url?scp=0036373999&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036373999&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036373999

VL - 693

SP - 571

EP - 576

BT - Materials Research Society Symposium - Proceedings

A2 - Northrup, J.E.

A2 - Neugebauer, J.

A2 - Look, D.C.

A2 - Chichibu, S.F.

A2 - Riechert, H.

ER -