Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

T. E. Cook; C. C. Fulton; W. J. Mecouch; K. M. Tracy; R. F. Davis; E. H. Hurt; G. Lucovsky; R. J. Nemanich

doi:10.1063/1.1559424

Measurement of the band offsets of SiO₂ on clean n- and p-type GaN(0001)

T. E. Cook, C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, R. J. Nemanich

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82 Scopus citations

Abstract

A study was conducted on the measurement of the band offsets of SiO₂ on clean n- and p-type GaN(0001). The interface electronic states were observed by x-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. Interface dipoles of 1.8 and 1.5 eV were detected for the GaN-SiO₂ interface for the n- and p-type surfaces.

Original language	English (US)
Pages (from-to)	3995-4004
Number of pages	10
Journal	Journal of Applied Physics
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.1559424
State	Published - Apr 1 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1559424

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abstract = "A study was conducted on the measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). The interface electronic states were observed by x-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. Interface dipoles of 1.8 and 1.5 eV were detected for the GaN-SiO2 interface for the n- and p-type surfaces.",

author = "Cook, {T. E.} and Fulton, {C. C.} and Mecouch, {W. J.} and Tracy, {K. M.} and Davis, {R. F.} and Hurt, {E. H.} and G. Lucovsky and Nemanich, {R. J.}",

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T1 - Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

AU - Cook, T. E.

AU - Fulton, C. C.

AU - Mecouch, W. J.

AU - Tracy, K. M.

AU - Davis, R. F.

AU - Hurt, E. H.

AU - Lucovsky, G.

AU - Nemanich, R. J.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - A study was conducted on the measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). The interface electronic states were observed by x-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. Interface dipoles of 1.8 and 1.5 eV were detected for the GaN-SiO2 interface for the n- and p-type surfaces.

AB - A study was conducted on the measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). The interface electronic states were observed by x-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. Interface dipoles of 1.8 and 1.5 eV were detected for the GaN-SiO2 interface for the n- and p-type surfaces.

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DO - 10.1063/1.1559424

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

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Measurement of the band offsets of SiO₂ on clean n- and p-type GaN(0001)

Abstract

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