Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

T. E. Cook, C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, Robert Nemanich

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

A study was conducted on the measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). The interface electronic states were observed by x-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. Interface dipoles of 1.8 and 1.5 eV were detected for the GaN-SiO2 interface for the n- and p-type surfaces.

Original languageEnglish (US)
Pages (from-to)3995-4004
Number of pages10
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
StatePublished - Apr 1 2003
Externally publishedYes

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x ray spectroscopy
photoelectric emission
photoelectron spectroscopy
dipoles
electronics
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., ... Nemanich, R. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). Journal of Applied Physics, 93(7), 3995-4004. https://doi.org/10.1063/1.1559424

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). / Cook, T. E.; Fulton, C. C.; Mecouch, W. J.; Tracy, K. M.; Davis, R. F.; Hurt, E. H.; Lucovsky, G.; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 93, No. 7, 01.04.2003, p. 3995-4004.

Research output: Contribution to journalArticle

Cook, TE, Fulton, CC, Mecouch, WJ, Tracy, KM, Davis, RF, Hurt, EH, Lucovsky, G & Nemanich, R 2003, 'Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)', Journal of Applied Physics, vol. 93, no. 7, pp. 3995-4004. https://doi.org/10.1063/1.1559424
Cook TE, Fulton CC, Mecouch WJ, Tracy KM, Davis RF, Hurt EH et al. Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). Journal of Applied Physics. 2003 Apr 1;93(7):3995-4004. https://doi.org/10.1063/1.1559424
Cook, T. E. ; Fulton, C. C. ; Mecouch, W. J. ; Tracy, K. M. ; Davis, R. F. ; Hurt, E. H. ; Lucovsky, G. ; Nemanich, Robert. / Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). In: Journal of Applied Physics. 2003 ; Vol. 93, No. 7. pp. 3995-4004.
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