Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

T. E. Cook, C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journalArticle

77 Scopus citations

Abstract

A study was conducted on the measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). The interface electronic states were observed by x-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. Interface dipoles of 1.8 and 1.5 eV were detected for the GaN-SiO2 interface for the n- and p-type surfaces.

Original languageEnglish (US)
Pages (from-to)3995-4004
Number of pages10
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
StatePublished - Apr 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Measurement of the band offsets of SiO<sub>2</sub> on clean n- and p-type GaN(0001)'. Together they form a unique fingerprint.

Cite this