A study was conducted on the measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). The interface electronic states were observed by x-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. Interface dipoles of 1.8 and 1.5 eV were detected for the GaN-SiO2 interface for the n- and p-type surfaces.
|Original language||English (US)|
|Number of pages||10|
|Journal||Journal of Applied Physics|
|State||Published - Apr 1 2003|
ASJC Scopus subject areas
- Physics and Astronomy(all)