Measurement of mean inner potential and inelastic mean free path of ZnO nanowires and nanosheet

Zhaofeng Gan; Seungho Ahn; Hongbin Yu; David Smith; Martha McCartney

doi:10.1088/2053-1591/2/10/105003

Measurement of mean inner potential and inelastic mean free path of ZnO nanowires and nanosheet

Zhaofeng Gan, Seungho Ahn, Hongbin Yu, David Smith, Martha McCartney

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

ZnO nanowires (NWs) and ZnO nano-sheets were grown using the chemical vapor deposition method. TheNWstructure was characterized using transmission electron microscopy, while the mean inner potential and inelastic mean free path for 200 keV electrons were measured using off-axis electron holography to be 15.3 ± 0.2 Vand 55 ± 3 nm, respectively. These values were then used to characterize the thickness of a ZnO nano-sheet, and gave consistent results. This study demonstrates that electron holography can provide useful information about nanostructured ZnO materials and devices.

Original language	English (US)
Article number	105003
Journal	Materials Research Express
Volume	2
Issue number	10
DOIs	https://doi.org/10.1088/2053-1591/2/10/105003
State	Published - Oct 2015

Keywords

Holography
Inelastic mean free path
Mean inner potential
Nanostructure
Semiconductor
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Metals and Alloys
Surfaces, Coatings and Films
Polymers and Plastics
Biomaterials

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title = "Measurement of mean inner potential and inelastic mean free path of ZnO nanowires and nanosheet",

abstract = "ZnO nanowires (NWs) and ZnO nano-sheets were grown using the chemical vapor deposition method. TheNWstructure was characterized using transmission electron microscopy, while the mean inner potential and inelastic mean free path for 200 keV electrons were measured using off-axis electron holography to be 15.3 ± 0.2 Vand 55 ± 3 nm, respectively. These values were then used to characterize the thickness of a ZnO nano-sheet, and gave consistent results. This study demonstrates that electron holography can provide useful information about nanostructured ZnO materials and devices.",

keywords = "Holography, Inelastic mean free path, Mean inner potential, Nanostructure, Semiconductor, ZnO",

author = "Zhaofeng Gan and Seungho Ahn and Hongbin Yu and David Smith and Martha McCartney",

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year = "2015",

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doi = "10.1088/2053-1591/2/10/105003",

language = "English (US)",

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T1 - Measurement of mean inner potential and inelastic mean free path of ZnO nanowires and nanosheet

AU - Gan, Zhaofeng

AU - Ahn, Seungho

AU - Yu, Hongbin

AU - Smith, David

AU - McCartney, Martha

PY - 2015/10

Y1 - 2015/10

N2 - ZnO nanowires (NWs) and ZnO nano-sheets were grown using the chemical vapor deposition method. TheNWstructure was characterized using transmission electron microscopy, while the mean inner potential and inelastic mean free path for 200 keV electrons were measured using off-axis electron holography to be 15.3 ± 0.2 Vand 55 ± 3 nm, respectively. These values were then used to characterize the thickness of a ZnO nano-sheet, and gave consistent results. This study demonstrates that electron holography can provide useful information about nanostructured ZnO materials and devices.

AB - ZnO nanowires (NWs) and ZnO nano-sheets were grown using the chemical vapor deposition method. TheNWstructure was characterized using transmission electron microscopy, while the mean inner potential and inelastic mean free path for 200 keV electrons were measured using off-axis electron holography to be 15.3 ± 0.2 Vand 55 ± 3 nm, respectively. These values were then used to characterize the thickness of a ZnO nano-sheet, and gave consistent results. This study demonstrates that electron holography can provide useful information about nanostructured ZnO materials and devices.

KW - Holography

KW - Inelastic mean free path

KW - Mean inner potential

KW - Nanostructure

KW - Semiconductor

KW - ZnO

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Measurement of mean inner potential and inelastic mean free path of ZnO nanowires and nanosheet

Abstract

Keywords

ASJC Scopus subject areas

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