Abstract

ZnO nanowires (NWs) and ZnO nano-sheets were grown using the chemical vapor deposition method. TheNWstructure was characterized using transmission electron microscopy, while the mean inner potential and inelastic mean free path for 200 keV electrons were measured using off-axis electron holography to be 15.3 ± 0.2 Vand 55 ± 3 nm, respectively. These values were then used to characterize the thickness of a ZnO nano-sheet, and gave consistent results. This study demonstrates that electron holography can provide useful information about nanostructured ZnO materials and devices.

Original languageEnglish (US)
Article number105003
JournalMaterials Research Express
Volume2
Issue number10
DOIs
StatePublished - Oct 1 2015

Keywords

  • Holography
  • Inelastic mean free path
  • Mean inner potential
  • Nanostructure
  • Semiconductor
  • ZnO

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Polymers and Plastics
  • Surfaces, Coatings and Films

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